SI4435DYTR Allicdata Electronics
Allicdata Part #:

SI4435DYTR-ND

Manufacturer Part#:

SI4435DYTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 8A 8-SOIC
More Detail: P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
DataSheet: SI4435DYTR datasheetSI4435DYTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI4435DYTR is a Field-Effect Transistor (FET) that is capable of operating at both high and low voltages. It is characterized by a high input impedance, low on-resistance, and high current drive capability. The SI4435DYTR is often used in applications that require fast switching speeds, low power consumption, and high reliability. This FET is also capable of conducting large currents with ease, making it an ideal choice for high-frequency switching applications. This article will discuss the application field and working principle of the SI4435DYTR.

Application Field of SI4435DYTR FET
The SI4435DYTR has a wide range of potential applications. Its high current drive capability makes it suitable for use as an LED driver, gate driver, or voltage regulator. It is also ideal for use in power converters and power switching systems. Due to its low power consumption, the SI4435DYTR is ideal for use in battery-powered systems where power efficiency is a priority. Its high input impedance and fast switching speed make it well suited for use in switching power supplies and DC-DC converters. Additionally, with its low on-resistance, it can be used as a switch in high-sensitivity circuits.

Working Principle of SI4435DYTR FET
The SI4435DYTR is a type of Field Effect Transistor (FET) that is controlled by an input voltage or current. The FET operates by creating an electric field that attracts electrons from the drain to the source. When a positive voltage is applied to the gate terminal, the electric field in the FET isstrong, and electrons flow from the drain to the source. This flow of electrons creates a current. Conversely, when a negative voltage is applied to the gate, the electric field in the FET weakens, and the current stops flowing. This allows the SI4435DYTR to act as a switch.

The SI4435DYTR can be used in a variety of switching applications, such as battery-powered systems, voltage regulators, and switching power supplies. In these applications, the FET acts as a switch, allowing current to flow to the load or blocking it as needed. The SI4435DYTR can also be used as a voltage regulator, allowing the voltage to be adjusted as needed to ensure the stability of the voltage output.

The SI4435DYTR is a popular choice for switching applications due to its fast switching speed, low power consumption, and high reliability. It is a versatile FET and can be used in a wide range of applications. Its high current drive capability makes it an ideal choice for applications that require large currents to be conducted such as LED drivers, gate drivers, and power supplies.

In conclusion, the SI4435DYTR is a Field-Effect Transistor (FET) that is characterized by a high input impedance, low on-resistance, and high current drive capability. It is an ideal choice for applications that require fast switching speeds, low power consumption, and high reliability. Its versatile nature allows it to be used in a wide range of switching applications and as a voltage regulator. Furthermore, its high current drive capability makes it an ideal choice for applications that require large currents to be conducted.

The specific data is subject to PDF, and the above content is for reference

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