SI4442DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4442DY-T1-GE3-ND

Manufacturer Part#:

SI4442DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 15A 8-SOIC
More Detail: N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-S...
DataSheet: SI4442DY-T1-GE3 datasheetSI4442DY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4442DY-T1-GE3 is a high-performance single P-Channel MOSFET technology device. It has low-capacitance design and high switching speed which make it a great choice for various application requirements. The MOSFET technology is used in the SI4442DY-T1-GE3, making it an ideal candidate for use in high-frequency, low-noise and high-reliability applications.

The SI4442DY-T1-GE3 is used in many application fields such as consumer electronics, TV, cable modems, networking, telecommunications, RF power and cellular technology. This MOSFET has a wide variety of application across multiple fields, such as consumer electronic consumer electronic devices, home automation, industrial electronic, motor controll and digital communication systems. It also has a high ability for switching hot load conditions, making it an attractive choice for many consumer electronics devices.

The working principle of the SI4442DY-T1-GE3 is based on the MOSFET technology. MOSFET is an acronym for metal-oxide-semiconductor field-effect transistor. It is a type of transistor that uses a voltage-controlled gate to control the effective current between the source and drain. The source is connected to the gate, and it controls the amount of current passing through the transistor. The amount of current passing through the transistor is dependent on the amount of voltage applied to the gate. The beginning of the MOSFET technology in the mid-1960s marked a new low-cost, efficient and reliable form of semiconductor technology.

The SI4442DY-T1-GE3 MOSFET is specially designed for high-speed applications. It has a low-capacitance design that is suitable for high-frequency operations. The MOSFET also features a guaranteed maximum on-resistance of 0.007 ohms and a high maximum Avalanche energy at a power dissipation of 250 mW. The device is available in a RoHS-compliant, surface mount SO-8 package.

The SI4442DY-T1-GE3 is widely used in consumer electronic applications due to its low power consumption, fast speed and low on-resistance. Its fast switching speed makes it ideal for use in applications such as networking, digital communication systems and motor control. The device provides a high power dissipation and is designed for easy handling and installation. The MOSFET technology is suitable for both high-speed and low power consumption applications making it an ideal choice for many consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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