SI4455DY-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI4455DY-T1-E3 is a component that belongs to the single metal-oxide-semiconductor field-effect transistor (MOSFET) family. This component is available in a Quad small outline IC (SOIC) package with exposed gate terminals. It offers integrated electrostatic discharge protection and low on-state resistance.

The SI4455DY-T1-E3 is a p-channel enhancement-mode MOSFET transistor. The component consists of four N-channel MOSFETs in a single surface mount package. This component has three pins, consisting of a source, drain, and gate. It is capable of being operated up to -55°C to 150°C junction temperature range. It has a maximum drain-source voltage of -20 V and a gate-source voltage of -4 V.

The working principle of the Si4455DY-T1-E3 is best described using the transfer curve. This is a diagram of the relationship between Vgs and Ids. The component is an enhancement-mode device, which means that the channel needs to be ‘energized’ or ‘turned-on’ in order for current to flow between source and drain. This is accomplished by applying a negative voltage between the gate and source.

In the linear region, the quantity of current is directly proportional to the gate-source voltage. As the gate-source voltage is increased, the on-state resistance decreases. This has the effect of lowering the amount of power dissipated from the MOSFET device.

The performance and characteristics of the Si4455DY-T1-E3 makes it suitable for a variety of application fields including power management, power supply and DC-DC converter applications. It also offers an efficient solution for DC-DC buck converter applications. It is widely used in automotive and computing industry. One application field where the component is widely used is in laptop battery chargers and power applications.

In summary, the SI4455DY-T1-E3 is a single p-channel enhancement-mode MOSFET transistor designed for power management. It operates with low gate voltages,high drain-source voltages and with high efficiency throughout the drain-source voltage range. With its integrated electrostatic discharge protection and low on-state resistance, this component can be used for a variety of application fields, such as DC-DC converters, automotive and computing industry.

The specific data is subject to PDF, and the above content is for reference