SI4463BDY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4463BDY-T1-GE3TR-ND

Manufacturer Part#:

SI4463BDY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 9.8A 8SOIC
More Detail: P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-...
DataSheet: SI4463BDY-T1-GE3 datasheetSI4463BDY-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4463BDY-T1-GE3 is a logic-level N-channel enhancement-mode vertical DMOS FET with exceptionally low on-resistance and very fast switching capabilities, due to its low capacitance, making it suitable for a wide range of applications. It is designed to eliminate the need for multiple current sinks, operating at low voltages and producing high currents. The FET is widely used in power switches, DC-DC converter controllers, server and network equipment, low voltage lighting and other switched mode power supplies.

The main purpose of the SI4463BDY-T1-GE3 is to enable efficient power transfer between two circuits, or between two components within the same circuit, while providing high breakdown voltage. It eliminates the need for multiple current sinks, or high-current power switches, and also helps to reduce power consumption, as it allows for very efficient switching of circuits. This FET is also capable of carrying very high power, making it useful for switching applications that require a lot of power.

In terms of its structure, the SI4463BDY-T1-GE3 is comprised of a single vertical N-Channel DMOS FET, allowing for high current operation. Its drain-source voltage rating is from 20V to 500V, and its on-resistance range is from 7mΩ to 35mΩ. Its operating temperature range is from -55°C to 175°C. Its maximum drain current is up to 43.3A, while its maximum avalanche energy is up to 6mJ.

The composition of the SI4463BDY-T1-GE3 is also notable. Of particular importance is its active gate, which is comprised of a combination of two layers of gate oxide, field oxide and a metal gate contact layer. This special composition allows for very low on-resistance, and also provides improved gate control to the FET. The gate oxide also prevents hot carriers from being generated, further increasing the efficiency of the FET.

The way the SI4463BDY-T1-GE3 works is simple and can be described as a combination of two traditional techniques - the FET acting as a current source and the DMOS acting as a switching device. When an appropriate voltage is applied to the gate, the FET acts as a current source and allows current to flow through the source to the drain. At the same time, the DMOS acts as a switching device and allows for very fast switching on and off of the current. This enables high speed switching, improved efficiency and reduced power consumption.

In terms of its application field, the SI4463BDY-T1-GE3 is used in highly effective power switching solutions. It is also used in robust systems that require very low on-resistance and high switching speed. Additionally, it is designed to deliver low channel-to-channel skew and very low thermal resistance. Furthermore, it is also suitable for high efficiency switched mode power supplies, and low voltage LED lighting.

In conclusion, the SI4463BDY-T1-GE3 is an advanced N-channel enhancement-mode vertical DMOS FET, capable of delivering exceptionally low on-resistance and very fast switching capabilities. It is a simple device that combines two traditional techniques, the FET acting as a current source and the DMOS acting as a switching device. Its structure also enables very low capacitance, allowing for its use in very efficient power switches, DC-DC converter controllers, server and network equipment, low voltage lighting, and other switched-mode power supplies.

The specific data is subject to PDF, and the above content is for reference

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