SI4464DY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4464DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4464DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 1.7A 8-SOIC |
More Detail: | N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8... |
DataSheet: | SI4464DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A SI4464DY-T1-GE3 transistor is a type of field effect transistor (FET) that is typically used in electronic circuits. This type of transistor is a single, insulated gate-type FET, and it functions as an electronic switch. It has the ability to switch between two different states, which is what makes it so useful in electronic circuits. In this article, we will discuss the application field and working principle of the SI4464DY-T1-GE3 transistor.
The SI4464DY-T1-GE3 is a metal oxide semiconductor (MOS) transistor. The MOS transistor is a device that consists of two terminal leads, a source lead and a drain lead, as well as a gate terminal that serves as a control element. The gate terminal can be used to control the flow of current through the transistor. This is done by either inducing a voltage into the gate terminal (turning the transistor "on"), or reducing the voltage (turning the transistor "off").
The SI4464DY-T1-GE3 transistor is most commonly used in applications that require high-speed switching, such as radio frequency (RF) circuits. This is because the SI4464DY-T1-GE3 transistor is relatively fast when switching between two states. This is due to its low capacitance, which allows for rapid switching. Additionally, this transistor also has a high immunity to electrostatic discharge (ESD) when compared to other types of transistors, making it an ideal choice for applications that require protection from ESD.
The SI4464DY-T1-GE3 transistor is able to switch between two different states because of its construction. The transistor consists of a source region, a drain region, and a gate terminal between them. When a positive voltage is applied to the gate terminal, the electrons in the source region are repelled, allowing current to flow through the transistor, thus turning it "on". Conversely, if a negative voltage is applied to the gate terminal, the electrons in the source region become attracted to it, blocking the flow of current and turning the transistor "off".
The SI4464DY-T1-GE3 is a versatile transistor that has a variety of applications. It is commonly used in RF applications, such as radio transmitters and receivers, as well as in other devices that require fast switching of signals, such as switchers and converters. This type of transistor is also used in automotive and industrial automation systems, as well as in amplifiers, power converters, and in circuits that require precise signal control.
In conclusion, the SI4464DY-T1-GE3 is a versatile and reliable transistor that can be used in a variety of applications. Its low capacitance and high ESD immunity make it an ideal choice for RF applications, and its fast switching capabilities make it well suited for a variety of other applications. In short, the SI4464DY-T1-GE3 is an efficient and reliable transistor that is sure to meet your needs.
The specific data is subject to PDF, and the above content is for reference
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