SI4466DY-T1-GE3

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The SI4466DY-T1-GE3 is a power MOSFET (PMOS) transistor designed for use in high-current switching applications. It has a maximum drain-to-source current (ID) rating of 7.5 A and a maximum voltage (VDS) rating of 40 V. Its relatively high RDS(on) (6.5 mΩ) and low gate-source voltage (Vgs) (3V) make it suitable for a variety of switching, protection, and low-frequency audio applications.

PMOS transistors are the most common type of field-effect transistor (FET). FETs have three terminals, the gate, source, and drain. The gate voltage determines the conductivity of the device: a positive voltage reduces the resistance, while a negative voltage increases the resistance. MOSFET transistors have both the source and the drain connected to the same type of charge carrier (i.e. either electrons or holes), while standard FETs have the source and drain connected to opposite type of charge carriers. This allows them to switch faster and produce less power dissipation.

The SI4466DY-T1-GE3 is a single N-channel PMOS power transistor, which means that it passes current through the N-type (electron) channel. When a positive voltage is applied to the gate, an inversion layer is formed at the gate-channel interface, which increases the conductivity of the channel. The positive gate voltage also attracts electrons from the source to the drain, resulting in current flow. The current between the source and drain can be increased or decreased by adjusting the gate voltage.

The SI4466DY-T1-GE3 is designed to operate in high current environments and is well-suited for high power switching applications. It is used in power supplies, DC-DC converters, battery chargers, automotive electronics, and other applications that require high-current switching or protection. It has a low RDS(on) value, allowing for efficient operation at high currents and voltage, and a low gate-source voltage (Vgs) rating, which reduces power loss in switching applications. The transistor also has a high breakdown voltage (BVDSS) rating of 40 V, which allows it to safely handle high voltage transients.

In summary, the SI4466DY-T1-GE3 is a single N-channel power MOSFET transistor. It is designed for high-current switching and protection applications, and its low RDS(on) and low Vgs values make it suitable for efficient operation at high currents and voltages. Its high BVDSS rating makes it capable of safely handling high voltage transients, making it suitable for automotive and other harsh applications.

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