SI4435FDY-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4435FDY-T1-GE3 is an N-channel, depletion-mode, fully-depletable type field-effect transistor (FET). As a transistor, it works by controlling the flow of current from the drain to the source.

This transistor is specifically designed for high-frequency high-voltage applications, particularly those involving motor, power supply switching, and other related applications. It has excellent high-frequency performance, as well as an on-resistance rating of 11Ω. It is constructed on an insulated metal-oxide-semiconductor (IMOS) Silicon substrate, and it has an HV-threshold rating of 30V.

The device is mainly composed of the gate and the source, which are two terminals that form a FET and regulate the flow of current. The gate works by modulating the barriers created between the source and the drain, which is enabled or disabled depending on the input voltage applied to the gate. When the gate voltage is high, electrons can easily pass from the source to the drain, and the current flows. On the other hand, when the gate voltage is low, electrons are prevented from flowing, and the current is blocked.

Additionally, the device has a low-on-resistance drain-source rectifying diode, which helps to protect the device from excessive voltage during the switching process. The device also has an expression for maximum drain-source resistance, which is important for determining the reliability and accuracy of the device.

In terms of applications, the SI4435FDY-T1-GE3 is often used in power supplies and motor drives. It is also used in consumer electronics such as PCs, laptops, and video game consoles. It is also used in automotive components, such as accelerators and on-off switches. Finally, it can also be employed in various light-control applications.

In conclusion, the SI4435FDY-T1-GE3 is a N-channel, depletion-mode, field-effect transistor. It is specifically designed for high-frequency, high-voltage applications, such as power supplies and motor drives, as well as consumer electronics, automotive components, and light-control applications. Its features include a low-on-resistance drain-source rectifying diode and an expression for maximum drain-source resistance.

The specific data is subject to PDF, and the above content is for reference