SI4410DY,518

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 5V
Series:	TrenchMOS™
Rds On (Max) @ Id, Vgs:	13.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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< Body>The SI4410DY is a single N-channel enhancement-type insulated gate field-effect transistor (IGFET) that is often used for a variety of power management applications. It is an ideal choice for providing high-current switching and voltage-level shifting in induction heating, automotive, smart power, industrial electronics, and a number of other applications. This article explains the applications and working principle of the SI4410DY.ApplicationsThe SI4410DY is a high-performance device that is used in a variety of power management applications such as:Induction Heating: The SI4410DY can be used as a switching element in induction heating to generate heat in different kind of materials. It is capable of providing high current switching with voltage-level shifting. Automotive: The SI4410DY can be used in automotive circuitry, providing high-current switching and voltage-level shifting in applications such as automotive lighting systems and brake systems.Smart Power: The SI4410DY is used in smart power converters, power factor correction, and other smart power applications.Industrial Electronics: The SI4410DY is also used in industrial applications, such as motor drives and power supplies. Working PrincipleThe SI4410DY is an N-Channel Enhancement-Type IGFET, which means that it is a type of field-effect transistor (FET) consisting of an insulated gate that controls the current flow from source to drain by varying the width of the channel between the two terminals.When a positive voltage is applied to the Gate terminal, it attracts the electrons from the source to the drain, creating a high-conductivity channel between them. This allows the current to flow from source to drain. As the Gate voltage is increased, the width of the channel increases, and more current can flow through it.When the Gate voltage is reduced, the electrons are repelled from the source to the drain, reducing the conductivity of the channel and allowing less current to flow.ConclusionThe SI4410DY is a single N-Channel Enhancement-Type IGFET that can be used for a variety of power management applications, such as induction heating, automotive, smart power and industrial electronics. It works by creating a high-conductivity channel between the source and drain by varying the width of the channel between them with a positive Gate voltage. < /Body >

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