Allicdata Part #: | SI4434DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4434DY-T1-E3 |
Price: | $ 0.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 2.1A 8-SOIC |
More Detail: | N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount ... |
DataSheet: | SI4434DY-T1-E3 Datasheet/PDF |
Quantity: | 5000 |
2500 +: | $ 0.78030 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 155 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.1A (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4434DY-T1-E3 is a N-Channel enhancement mode Field Effect Transistor (FET) with low on resistance, fast switching speed, and high input impedance. It belongs to the single-FET family and is designed to be used with digital as well as analog circuits. It is ideal for switching, voltage level shifter, and power management applications.
The SI4434DY-T1-E3 is a desktop computer chipset design and uses a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) process. It has a maximum drain current of 18A and a maximum drain-source voltage of 30V. The maximum gate-source voltage is ±20V. The FET has a typical off-state output capacitance of 170pF and an on-state resistance of 0.006 ohms.
The working principle behind the SI4434DY-T1-E3 is based on electronic conduction between the source and drain terminals of the FET, which is further controlled by the voltage applied to the gate terminal. The higher the voltage applied, the more current flows through the FET, allowing it to act as a switch. The low on resistance and fast switching speed of the SI4434DY-T1-E3 make it suitable for high power and high speed digital circuits. It is also used to create an interface between analog and digital circuits because of its low on resistance and high input impedance. In this way, it can switch voltages or power without creating unwanted noise.
The SI4434DY-T1-E3 is used extensively in power management systems. It can be used to control the flow of power between various components such as CPUs, GPUs, and other peripherals. The low on resistance of the FET makes it ideal for quick power supply solutions, allowing a larger current to flow and quickly switch between components. It is also used in solar microinverters, voltage level shifter, motor drive circuits, and light dimmer circuits due to its high input impedance and fast switching speed.
Because of its features, the SI4434DY-T1-E3 has a wide range of applications. It can be used in power management systems, motor drive circuits, and solar microinverters. It is also used for switching circuits and in analog and digital circuits for voltage level shifting and for interfacing between components. It is also used in light dimmer circuits and other high power circuitry.
The specific data is subject to PDF, and the above content is for reference
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