SI4487DY-T1-GE3

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The SI4487DY-T1-GE3 is an N‑Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) developed by Siliconix Inc. It is one of Silicon\'s most powerful n-channel enhancement mode MOSFETs, offering excellent on-resistance, current rating, and durability. The SI4487DY-T1-GE3 is typically used for applications requiring robust switching performance in harsh environments such as automotive, high voltage industrial, and consumer electronics.

The SI4487DY-T1-GE3 is a Power MOSFET, which is a voltage-controlled field effect transistor (FET) in which the current-carrying channel is formed by the accumulation of charge carriers in a semiconductor material. It is designed to operate with low fractional gate charges and gate-source capacitance, providing both low on-resistance and low input capacitance. The device is designed to withstand common-mode transients and is qualified with fast switching, high dv/dt immunity, and high surge, even with low on-state resistance. The low on-state resistance, high current handling capability, and ESD protection make the SI4487DY-T1-GE3 an ideal solution for automotive and industrial applications that require reliability and durability.

The SI4487DY-T1-GE3 has an operating temperature range of -55°C to +125°C and can be used for power management in applications up to 150V. Its extremely low on-resistance ensures fast switching and makes it suitable for use in high peak-current delivery systems, such as those used in electric vehicles. The MOSFET can be switched at high frequencies and is ideal for applications requiring fast switching and low power dissipation.

The SI4487DY-T1-GE3 uses a majority-carrier channel to transfer current from the source to the drain. In a MOSFET, the conductivity of the channel is controlled by the electric field created by the voltage applied to the gate, which modulates the number of carriers in the channel. When voltage is applied to the gate, the majority-carrier concentrations increase, reducing the resistance of the channel and allowing current to flow from the source to the drain. When the gate voltage is removed, the majority-carrier concentration drops and the channel resistance increases, preventing current from flowing.

The SI4487DY-T1-GE3 is an essential device for any system requiring reliable, fast switching with superior immunity to noise and voltage transients. Its combination of low on-resistance and wide operating temperature range makes it highly suitable for automotive and industrial applications that require reliable and robust performance in extreme conditions.

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