SI4418DY-T1-GE3

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The SI4418DY-T1-GE3 is a single N-channel enhancement mode MOSFET transistor specifically designed to minimize the on-state resistance and Phosphorous doped in order to deliver high performance. It is suitable for power switching applications in the load of up to 24V and 1.7A which is suitable for use at high frequency of up to 1.5MHz. With a wide range of features and technical specifications, the SI4418DY-T1-GE3 is ideal for a variety of applications within various industries.

A single N-channel MOSFET is an ideal choice as a power switching device due to its low on-state resistance when compared to other types of transistors. Low on-state resistance helps in minimizing power losses which faster switching speed possible. Due to this feature, the SI4418DY-T1-GE3 is generally used where high-frequency operation is required. The wide range of features and specifications includes drain-source voltage capability up to 24V and a drain current of up to 1.7A, a maximum operating temperature range of -55℃ to 150℃ and an on-state resistance of down to 2.2Ω. Additionally, it has an RDS(on) of 2.2Ω and an avalanche energy rating of 3.3mJ.

The MOSFET has a variety of application fields which includes the power management in portable electronic devices, automotive systems, DC-DC converters, computer servers and more. The SI4418DY-T1-GE3 is a cost-effective solution which provides excellent performance at a value-driven price point. It is considered to be one of the best transistors on the market today and is used in various applications. It is also available in various package sizes such as SOT-23, SOT-223 and SOP-8.

The SI4418DY-T1-GE3 works by using an N-channel which switches a current by a controlling of input signals. The main advantage of using N-channel MOSFETs is its ability to operate on voltages less than the channel-depletion threshold. The SI4418DY-T1-GE3 uses an N-channel MOSFET which switches a current by a controlling of input signals. The voltage that is applied to the gate terminal controls the flow of the current through the channel. The channel-depletion threshold is the point where the channel turns on and conduct current. When no voltage is applied to the gate terminal, the channel is completely off and no current flows.

The SI4418DY-T1-GE3 is an ideal choice for a variety of applications due to its extensive features and technical specifications. It is also available in various package sizes to fit various applications. It is suitable for power switching applications in the load of up to 24V and 1.7A, offering a low on-state resistance along with an avalanche energy rating of 3.3mJ. From automotive systems to computer servers, this transistor is sure to fulfill your requirements and offer exceptional performance.

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