Allicdata Part #: | SI4404DY-T1-GE3-ND |
Manufacturer Part#: |
SI4404DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 15A 8-SOIC |
More Detail: | N-Channel 30V 15A (Ta) 1.6W (Ta) Surface Mount 8-S... |
DataSheet: | SI4404DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI4404DY-T1-GE3 is a single N-Channel power MOSFET. It is specifically designed to provide improved system performance and cost savings in a wide variety of applications. The device features a breakdown voltage of 20 volts, an on-state resistance of 0.012 Ohm, a maximum channel current of 11 Amps and a maximum power dissipation of 25 Watts.
This device is ideal for use in low voltage applications such as those found in computing and consumer electronics, including voltage regulators and DC-DC converters, power management circuits, and high-speed data links. The low on-resistance of the device reduces power losses in these applications. In addition, the device is well-suited for use in high-side switch applications, such as those used in LED lighting.
The SI4404DY-T1-GE3 operates on the principle of enhancement-mode MOSFETs. This type of device relies on a built-in electric field to control the flow of electricity between the source and drain electrode. The electric field is created by a gate voltage, which can be turned on or off using an external control signal. When the gate voltage is turned on, the electric field between the source and drain weakens, allowing current to flow. When the gate voltage is turned off, the electric field is strengthened and the flow of current is blocked.
This type of device offers several advantages over other types of transistors, including low on-resistance, high current density, fast switching speed, and low power consumption. Additionally, it is non-polar, meaning it does not require a physical orientation for its operation.
In addition to its low on-resistance, the SI4404DY-T1-GE3 also features a rugged construction and an integrated ESD protection diode. These features make the device suitable for use in harsh or high-voltage environments, as well as in applications with high levels of electrical noise.
Overall, the SI4404DY-T1-GE3 is a highly-versatile single N-Channel power MOSFET with a low on-resistance, fast switching speed, and integrated ESD protection. It is ideal for applications in computing and consumer electronics, as well as in high-side switch applications such as those used in LED lighting.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4448DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 50A 8-SOI... |
SI4401DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.7A 8-SO... |
SI4404DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
SI4412ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5.8A 8-SO... |
SI4465ADY-T1-GE3 | Vishay Silic... | 0.68 $ | 5000 | MOSFET P-CH 8V 8SOICP-Cha... |
SI4430BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A 8-SOI... |
SI4447DY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET P-CH 40V 3.3A 8-SO... |
SI4410DY,518 | NXP USA Inc | 0.0 $ | 1000 | MOSFET N-CH 30V SOT96-1N-... |
SI4410DY | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 10A 8-SOI... |
SI4435DYTR | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 8A 8-SOIC... |
SI4420DY | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4410DYPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 10A 8-SOI... |
SI4420DYPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4435DYPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 8A 8-SOIC... |
SI4420DYTR | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 12.5A 8-S... |
SI4403BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 7.3A 8SOI... |
SI4409DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 150V 1.3A 8-S... |
SI4418DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 2.3A 8-S... |
SI4446DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 40V 3.9A 8-SO... |
SI4470EY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 9A 8-SOIC... |
SI4484EY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 4.8A 8-S... |
SI4401DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 40V 8.7A 8-SO... |
SI4404DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
SI4406DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4406DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 13A 8-SOI... |
SI4409DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 150V 1.3A 8-S... |
SI4411DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 9A 8-SOIC... |
SI4411DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 9A 8-SOIC... |
SI4412ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 5.8A 8-SO... |
SI4438DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 36A 8-SOI... |
SI4438DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 36A 8-SOI... |
SI4448DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 12V 50A 8-SOI... |
SI4453DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 10A 8-SOI... |
SI4453DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 10A 8-SOI... |
SI4462DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 200V 1.15A 8-... |
SI4466DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 9.5A 8-SO... |
SI4483EDY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 10A 8-SOI... |
SI4486EY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.4A 8-S... |
SI4493DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 10A 8SOIC... |
SI4493DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 10A 8SOIC... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...