SI4472DY-T1-E3

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The SI4472DY-T1-E3 is a discrete power semiconductor device. It is a part of a family of single-gate field-effect transistors (FETs) which are commonly used in a variety of high-power switching applications. This device is designed for low drain-source on-resistance and low gate-bias voltage operation.

The SI4472DY-T1-E3 belongs to a single MOSFET with N-channel enhancement type. It has added an epitaxial layer on its surface. Also, this device is equipped with a drain pin and a gate pin whose function is to control the on-state resistance. This allows a greater range of operation of this device compared to similar FETs. The overall features of the SI4472DY-T1-E3 make it suitable for various high-power switching applications.

The SI4472DY-T1-E3’s maximum drain-source voltage is 80 V and the maximum drain-source current is 20 A. As for its on-state characteristics, the drain-source resistance (RDS) is typically 1.8 mΩ at VGS= 10V and theStatic gate threshold voltage is 40 mV. It has a low gate-source leakage current (1 μA) and is designed for operation at low gate drive voltages (1.8 V). This helps reduce power consumption and minimize stress on the gate circuit.

The operation of the SI4472DY-T1-E3 is mainly aided by its high input impedance and fast switching speeds. In addition, the device is not prone to latchup and also has a low thermal resistance. The output characteristics also include a low gate-source capacitance and a low gate-drain capacitance, allowing a low input power to drive the device.

One of the major advantages of this device is its low power consumption. As stated earlier, due to the low gate drive voltage (1.8 V), the power consumed is drastically reduced (1/7th of the power consumed by the same device with a 5 V drive voltage). This makes the device ideal for use in battery-powered applications. Furthermore, the ability of the SI4472DY-T1-E3 to operate at low drain-source voltages (down to 0.6 V) reduces the power consumption even further. These characteristics ensure that power is conserved, making it an all-around environmentally-friendly option.

In summary, the SI4472DY-T1-E3 is a single-gate enhancement mode N-channel field-effect transistor that is ideally suited for high-power switching applications. Its design features offer superior device performance with low power consumption. Its low gate drive voltage and input power rating, as well as its low on-state resistance and fast switching speeds, make it suitable for power-saving applications. Further, its low thermal resistance and absence of latch-up make it a reliable choice for many applications.

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