SI4470EY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4470EY-T1-E3TR-ND

Manufacturer Part#:

SI4470EY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 9A 8-SOIC
More Detail: N-Channel 60V 9A (Ta) 1.85W (Ta) Surface Mount 8-S...
DataSheet: SI4470EY-T1-E3 datasheetSI4470EY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.85W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI4470EY-T1-E3 is a N-channel enhancement mode MOSFET that is commonly used in a wide range of applications, from consumer electronics to industrial switchgear. It is intended for use in low-pulse applications and is characterized by its exceptional performance and low power consumption. The device features a TTL-compatible gate drive and has a wide range of gate and drain current capabilities. It is rated for a maximum drain source voltage of 200V, making it suitable for a variety of applications, including low voltage switching, relay switching and motor control.

The basic working principle of the SI4470EY-T1-E3 is that of an N-type transistor. As such, its main function is to act as a switch, controlling the flow of current between the source and drain terminals. When the gate is placed at a positive voltage relative to the source, an inversion layer will form in the channel between the source and the gate, allowing current to flow between the source and the drain. The higher the gate voltage, the larger the current that is allowed to flow through the device.

In its most common applications, the SI4470EY-T1-E3 is used as a low voltage switch, as it can operate at voltages as low as 0.8V. It is also well-suited for operation in a variety of load conditions, from high to low impedance, and its fast operation makes it an ideal choice for applications that require high switching speeds. The device has an exceptionally low on-resistance and low capacitance, making it an optimal choice for applications such as relay and motor control, where fast switching speeds are required.

In applications where power consumption is a major factor, such as battery-powered devices, the SI4470EY-T1-E3’s low power consumption makes it an ideal choice. It can operate at a maximum of 200V and its exceptionally low on-resistance means that it consumes very little power, even when the device is turned on. Furthermore, its low capacitance and fast switching time mean that it is suitable for use in applications such as power switching, motor control and low-voltage switching.

Overall, the SI4470EY-T1-E3 is a versatile and reliable MOSFET. Its wide range of gate and drain current capabilities, as well as its low power consumption and fast switching speed, make it an optimal choice for applications ranging from consumer electronics to industrial switchgear. Furthermore, its low on-resistance and low capacitance mean that it is well-suited for use in applications where power consumption is a concern, such as battery-powered devices.

The specific data is subject to PDF, and the above content is for reference

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