| Allicdata Part #: | SI4497DY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4497DY-T1-GE3 |
| Price: | $ 1.63 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 30V 36A 8-SOIC |
| More Detail: | P-Channel 30V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surfac... |
| DataSheet: |  SI4497DY-T1-GE3 Datasheet/PDF |
| Quantity: | 15000 |
| 1 +: | $ 1.62500 |
| 10 +: | $ 1.40833 |
| 100 +: | $ 1.13750 |
| 1000 +: | $ 1.08333 |
| 10000 +: | $ 1.02917 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.5W (Ta), 7.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9685pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 285nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SI4497DY-T1-GE3 MOSFET is a semiconductor device that is designed for power switching and high frequency switching applications. It is capable of operating at high voltage and high current levels. It can be used in a wide variety of applications, including motor control, power management, and high frequency switching.The SI4497DY-T1-GE3 MOSFET is a single-pole, double-throw (SPDT) fist-type device. It is composed of two metal-oxide-semiconductor field-effect transistors (MOSFETs) in a single package. These two MOSFETs are arranged in a complementary-symmetry configuration. This means that one MOSFET is configured as an n-channel and the other is configured as a p-channel. The primary benefit of this device is its ability to control current flow between two electrical nodes. The two nodes each have a gate that is used to control the current flow between them. By applying a voltage to the gate, the current flow is determined. A high voltage across the gate will result in increased current flow, while a low voltage will result in decreased current flow.The SI4497DY-T1-GE3 MOSFET is typically used in power switching applications. It can be used to provide a low-loss switching solution for the control of high-current loads. The device has a low RDS(ON) resistance, which means that it is able to switch at high frequencies without significant power losses in the form of heat. This makes it ideal for applications that require power switching at high frequencies.The SI4497DY-T1-GE3 MOSFET also has an inherent ESD protection, which makes it suitable for use in high-voltage environments. The ESD protection feature is especially important in applications where there is a risk of electrostatic discharge (ESD). The device is able to safely process voltages up to 600V.The SI4497DY-T1-GE3 MOSFET is an excellent choice for a wide range of high-frequency, high-voltage applications. It is capable of providing power switching with low power losses and a high level of ESD protection. It is a reliable, efficient, and cost-effective solution for the control of power loads.
The specific data is subject to PDF, and the above content is for reference
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