SI4634DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4634DY-T1-GE3TR-ND

Manufacturer Part#:

SI4634DY-T1-GE3

Price: $ 0.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 24.5A 8-SOIC
More Detail: N-Channel 30V 24.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surf...
DataSheet: SI4634DY-T1-GE3 datasheetSI4634DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.62000
10 +: $ 0.60140
100 +: $ 0.58900
1000 +: $ 0.57660
10000 +: $ 0.55800
Stock 1000Can Ship Immediately
$ 0.62
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4634DY-T1-GE3 is a logic level enhancement mode N channel MOSFET. It is a vertical construction device that features high-current and low RDS (on) performance in a conventional package. Its wide operating range make it useful in a variety of designs. This device is primarily used in switching applications, where a high on state current is needed. Some other key features of this device include a low output capacitance, low input capacitance and good thermal stability.

The SI4634DY-T1-GE3 is most commonly used in a variety of low-frequency switching applications. It can be used in DC to AC converters, battery charging circuits and DC-DC converters. It is also suitable for general-purpose switching applications. The device’s low on resistance and high current density make it suitable for applications requiring high power and low heat dissipation. Furthermore, its low gate-source capacitance makes for low switching delays.

The SI4634DY-T1-GE3 is a highly reliable device with low susceptibility to EOS (electrical overstress) and ESD (electrostatic discharge). It has a rated current of up to 30A, making it suitable for high-current applications. The device is RoHS compliant and features a relatively small footprint.

The operation of the SI4634DY-T1-GE3 is based on the principle of MOSFET technology. It is an enhancement-mode device with an n-channel. When a voltage is applied to the drain and gate, the current flows through the device. By varying the voltage applied to the gate, the current flow can be adjusted to change the output state of the device. The device can be used to control the on/off state of a load by applying varying gate voltages.

The SI4634DY-T1-GE3 is an impressive device and has numerous application fields. It can be used in bridge rectifier circuits, solenoid drivers, motor controllers, switching regulators and DC-DC converters. In addition, the device can be used in various other applications requiring a high-current MOSFET with a low RDS (on). Furthermore, the device can be used as an off-state switch to provide a high-isolation barrier between two circuits.

In conclusion, the SI4634DY-T1-GE3 is an impressive single N channel MOSFET device with a low RDS (on). It is widely used in low-frequency switching applications and can be used in various other applications as well. The device is highly reliable, RoHS compliant and has a small footprint. It is an impressive device with numerous application fields and can be used as an off-state switch to provide a high-isolation barrier between two circuits.

The specific data is subject to PDF, and the above content is for reference

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