SI4636DY-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 4.4W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2635pF @ 15V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	17A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
The SI4636DY-T1-GE3 is a 200 V single N-channel enhancement mode Field-Effect Transistor (FET), manufactured by Vishay Semiconductor. This component is a high-performance device, primarily intended for analog and digital signal switching applications. It provides a high level of accuracy and reliability for a variety of different purposes. This article will examine the application field and working principle of the device.SI4636DY-T1-GE3 Application Field
The SI4636DY-T1-GE3 offers an extremely wide range of applications, thanks to its impressive versatility. It is commonly used in applications such as switches and as a high-speed electronic switch in automotive circuit designs. It can also be used in power circuits, including power supply designs and power factor correction circuits.In addition, the SI4636DY-T1-GE3 can be used in various industrial equipment, such as servo motors, frequency converters, inverters, and various other types of control systems. The device can also be used as a switching element in radio communications equipment, electronic measurement equipment, and medical instrumentation.SI4636DY-T1-GE3 Working Principle
The SI4636DY-T1-GE3 is an enhancement-mode FET, meaning that it operates based on junction capacitance instead of its drain-source resistance. The device contains an N-type channel between source and drain. When this channel is "enhanced" (or "activated"), it allows current to flow between the source and the drain terminals.When the voltage applied to the gate terminal is zero (V_GS = 0 V), the N-type channel is extinguished and no current will flow between the device\'s terminals. This "off" state can be used to switch off electrical signals in applications such as power supply designs.When a positive voltage is applied to the gate terminal, the N-type channel is activated and current begins flowing between the source and the drain terminals. The device can also be used to switch on electrical signals.The SI4636DY-T1-GE3 offers superior performance when compared to conventional FETs, thanks to its high switching speed and improved gate charge. This makes it an ideal choice for applications that require high speed and low power consumption.Conclusion
The SI4636DY-T1-GE3 is a versatile and reliable FET that can be used in a wide variety of applications. Its enhanced gate charge and high switching speed make it an ideal choice for power supply designs, automotive circuits, and many other types of applications. The device operates based on junction capacitance, and its N-type channel can be "activated" or "enhanced" to switch on or off electrical signals.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description