SI4630DY-T1-E3 Discrete Semiconductor Products

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The SI4630DY-T1-E3 is a high-performance depletion-mode, E-mode Field Effect Transistor (FET), made from advanced Silicon-on-Insulator process. It is specifically designed for single-ended and differential signal switching applications. The device involves a single gate and a single source, making it a simple and flexible product, ideal for low-voltage, low-power signal switching, signal buffering and logic applications.

The depletion-mode, E-mode FET is a normally-off device, which does not pass current in the OFF state. When a negative gate voltage is applied, the voltage needed to turn the device ON is directly proportional to the gate voltage, allowing precise control of the on-state resistance, which is determined by the gate current. The on-state resistance varies with the gate voltage, making it a voltage-controlled device. The E-mode FET has a relatively high maximum drain current, making it well-suited for power management applications.

The single-ended and differential signal switching applications of the SI4630DY-T1-E3 primarily use the voltage-controlled on-state resistance of the device. When a control signal is applied to the gate, the device adjusts its resistance according to the voltage of the control signal, and passes the signal through the device to its output. The device is also capable of providing buffering services, in which the current is routed from the source to the drain without significant loss. In addition, the E-mode FET is capable of providing logic functions, such as setting thresholds for analog signals.

The SI4630DY-T1-E3 can operate at low voltages, making it suitable for low-power systems. The device offers significant temperature performance and low leakage current. The operating temperature range of the device is from -40°C to 150°C. The device also offers fast switching, making it ideal for high-speed communication applications. The device’s maximum drain current is up to 1.5A, more than enough for most low-power systems. In addition, the device offers good thermal performance, as the thermal resistance of the device is less than 8°C/W. Finally, the breakdown BV($DSS) of the device is 25V.

The SI4630DY-T1-E3 is a depletion-mode, E-mode Field Effect Transistor that can be used in single-ended and differential applications. Due to its ability to operate at low voltages and its excellent temperature performance, the device is well-suited for low-power systems. The device is also capable of providing low-noise buffering, setting thresholds for analog signals and providing logic functions. The device also has a high maximum drain current and good thermal performance. Finally, the device has a breakdown BV of 25V.

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