| Allicdata Part #: | SI4682DY-T1-E3-ND |
| Manufacturer Part#: |
SI4682DY-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 16A 8-SOIC |
| More Detail: | N-Channel 30V 16A (Tc) 2.5W (Ta), 4.45W (Tc) Surfa... |
| DataSheet: |  SI4682DY-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 4.45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1595pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI4682DY-T1-E3 is a type of component known as a Metal-Oxide-Silicon Field-Effect Transistor (MOSFET). This type of transistor operates very differently from the common Bipolar Junction Transistor (BJT). MOSFETs are used to control electric signals, voltage, and energy. They are used in a wide range of applications, from low voltage analog circuits, to power converters, power amplifiers, motor controls, and high-frequency circuits. In this article, we will discuss the application field and working principle of the SI4682DY-T1-E3.The SI4682DY-T1-E3 is a single-level enhancement mode MOSFET. This device can be used for switching a variety of low voltage and low current circuits. Its electrical properties makes it suitable for use in switching power supplies, DC-to-DC converters, audio amplifiers, and digital circuits. Its low on-resistance and low capacitance make it an ideal choice for high frequency switching applications.The SI4682DY-T1-E3 is an N-channel MOSFET, which means it utilizes negative charge carriers. It has a threshold voltage of 4V and an on/off resistance of 0.055Ω. The device has a maximum drain-to-source breakdown voltage of 49V and a maximum continuous drain current of 30A. It also has a very low gate capacitance of 0.003pF, making it ideal for high frequency switching applications. The working principle of the SI4682DY-T1-E3 is fairly simple. When a positive voltage is applied at the gate, it will create an electric field between the gate and the source, which will attract electrons, allowing current to flow through the channel. This is known as the “on” state. When the voltage is removed from the gate, the electric field dissipates, and the electrons will be repelled, preventing current from flowing through the channel. This is known as the “off” state.MOSFETs like the SI4682DY-T1-E3 have a variety of advantages over other types of transistors. They are highly efficient, consume very little power, and can switch rapidly between the on and off states. They also offer excellent noise immunity, which makes them ideal for high frequency circuits. In conclusion, the SI4682DY-T1-E3 is an ideal choice for a wide range of applications. Its low on-resistance, low capacitance, and excellent noise immunity make it an ideal choice for high frequency switching applications. The device’s simple working principle allows it to control electric signals, voltage, and energy efficiently with minimal power consumption.
The specific data is subject to PDF, and the above content is for reference
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