SI4686DY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4686DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4686DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 18.2A 8-SOIC |
More Detail: | N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surfac... |
DataSheet: | SI4686DY-T1-E3 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 5.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.2A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
SI4686DY-T1-E3 is a type of n-channel, depletion-mode, low-voltage, small signal vertical MOSFET transistor. This part is a single transistor device with up to 8A continuous drain current and up to 2V gate-source voltage. It is an economical choice for applications that require a low threshold voltage and low on-resistance.
Application Field
The SI4686DY-T1-E3 transistor can be used in a variety of applications, such as motor control, load switch applications, and motor control. This type of device is commonly used in power supplies, motor controllers, switching pulse generators, and other high-current control circuits.
This transistor can also be used for audio pre-amplification, audio switching, and mixing. In addition, it is ideal for sensing and power control applications such as motor speed control, lighting control, power conversion, and over/under voltage protection.
Working Principle
An n-channel MOSFET is constructed with a source and a drain, which are both connected to independent electrodes. The source electrode is grounded, and the drain is connected to a negative voltage. In between the source and the drain is the channel, which is composed of a thin layer of semiconductor material like silicon. When a voltage is applied to the gate of the MOSFET, a voltage drop is created, causing electrons to flow from the source to the drain. This controlled current is what makes this type of device so useful in circuit designs.
The SI4686DY-T1-E3 transistor is a depletion-mode device, meaning that its gate must be more negative than the source for it to be on. This gives it a low voltage threshold, allowing it to be actuated with a low voltage and switching quickly.
Advantages
The SI4686DY-T1-E3 transistor offers several advantages over other types of transistors. Firstly, it is able to handle a large amount of current flow giving it the flexibility to use in a variety of applications. Secondly, the device has a low on-resistance, which results in a lower voltage drop for a given current flow. Finally, it has a low threshold voltage, enabling the device to be actuated by low voltages.
Conclusion
The SI4686DY-T1-E3 transistor is an economical choice for a variety of applications. Its low voltage threshold and low on-resistance make it a good option for motor control, load switching, audio switching and pre-amplification, and power control applications. In addition, the device is capable of handling large amounts of current, allowing it to be used in a variety of circuits. As such, this transistor is well suited for use in applications that require a low voltage threshold and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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