SI4660DY-T1-E3

The SI4660DY-T1-E3 is a silicon based N-Channel insulated gate field effect transistor (IGFET), sometimes simply referred to as an Insulated Gate Bipolar Transistor (IGBT). It is an ideal choice for a broad range of applications, including motor control, high voltage power supplies, and lighting control.

The SI4660DY-T1-E3 is rated at 30A and 500V maximum. The power dissipation is approximately 10 watts. This device features a relatively low turn-on voltage of 1V and a low gate source capacitance of 15pF making it an excellent choice for low voltage applications. The extremely low on-resistance of 500mΩ makes it ideal for power switching applications.

The device utilizes a proprietary Silicon-on-Sapphire (SOS) technology which combines superior device thermal performance and high switching frequency capability. The low gate thresholds and wide gate drive compatibility make it a suitable solution for both low voltage switching applications and high voltage AC and DC power control applications. The device is also capable of being driven with low current PWM signals for precision control.

The high frequency performance of the SI4660DY-T1-E3 makes it an ideal choice for high power switch mode power supplies. The low on-resistance and low gate capacitance also make it well suited for use in lighting control applications, such as dimmable LED illumination. The wide gate drive compatibility allows for the SI4660DY-T1-E3 to be directly driven by micro-controllers and other digital control devices.

The SI4660DY-T1-E3 utilizes a self-aligned guard ring structure and floating gate construction to provide low frequency noise immunity and transient response. The devices are also designed with built in temperature protection and over-current protection features. This makes them an excellent choice for use in a wide range of demanding applications.

In summary, the SI4660DY-T1-E3 is an excellent choice for a broad range of applications, including motor control, high voltage power supplies, lighting control, and PWM control applications. The low turn-on voltage, low gate capacitance and low on-resistance make it an excellent choice for a wide range of low voltage and high voltage power switching applications. The built-in temperature and over-current protection, combined with the self-aligned guard ring structure, make the SI4660DY-T1-E3 an ideal choice for a wide range of demanding applications.