Allicdata Part #: | SI4636DY-T1-E3-ND |
Manufacturer Part#: |
SI4636DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 17A 8SOIC |
More Detail: | N-Channel 30V 17A (Tc) 2.5W (Ta), 4.4W (Tc) Surfac... |
DataSheet: | SI4636DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 4.4W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2635pF @ 15V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4636DY-T1-E3 is a transistor manufactured by Vishay Siliconix. It is a single N-Channel Enhancement Mode MOSFET in a Leadless Molded Plastic Small Outline (LSP) Surface Mount Package. It is used primarily in applications such as high side and low side power switch, gate drives, and switching noise suppression.
Enhancement-mode MOSFETs are generally found in three distinct sensitivity modes, low, medium, and high. They also feature anti-parallel diode protection, and operate in either depletion or enhancement mode. Typically, Enhancement-mode MOSFETs are used in DC power supply and voltage converter applications, and their input impedance is much higher than depletion-mode MOSFETs. This allows them to switch quickly and safely while reducing the power losses associated with constant on-times.
The SI4636DY-T1-E3 is rated for a maximum drain current of 36 Amps and a maximum drain voltage of 40 Volts. The maximum junction temperature rating is 140°C. It has a total gate charge of 11nC, an input capacitance of 365pF, and a maximum output capacitance of 3460pF. Its typical turn-on and turn-off times are 2.3µs and 8.3µs, respectively. The on-state resistance is typically 16 milliohms.
The SI4636DY-T1-E3 is suitable for use in a wide range of applications, including switch-mode power converters, motor control applications, audio amplifiers, high-end audio applications, lighting systems, notebook computers, and white goods. It has excellent protection against high-current overshoot and is capable of withstanding a continuous drain current of up to 36 Amps. It also has low on-resistance and excellent Rds(on) linearity.
The working principle of the SI4636DY-T1-E3 is based on the MOSFET technology, which uses an electric field to control the flow of electric current. MOSFETs are unipolar transistors, meaning they use only one type of charge carrier. When a gate voltage is applied, it creates an electric field, which causes the electrons to move towards the source contact and away from the drain contact. This, in turn, lowers the resistance between the source and drain contacts, allowing current to flow.
The SI4636DY-T1-E3 is a highly efficient transistor, which can be used in a wide range of applications. It is capable of withstanding a continuous drain current of up to 36 Amps, and its turn-on and turn-off times are comparatively fast. It also has low on-resistance and excellent Rds(on) linearity, making it a good choice for high-current applications.
The specific data is subject to PDF, and the above content is for reference
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