SI4682DY-T1-GE3

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The SI4682DY-T1-GE3 is a Single N channel enhancement-mode Field-Effect Transistor (FET). It is an advanced power MOSFET for applications requiring high current and/or low on-resistance. This device’s on-resistance and gate charge have been optimized in order to reduce conduction and switching losses in high frequency switching applications. It is constructed using a special silicon N channel power MOSFET process with gate dielectric specifically designed for superior gate charge and low leakage current. The gate oxide design also helps to ensure a high performance device.

A Si4682DY-T1-GE3 is generally used in power applications and is ideal for applications such as high-side and low-side switches, switching regulators and converters, DC-DC converters, and power switching. It has an Rds(on) of 0.0086Ω, an operating temperature range of -55°C to 150°C, and a maximum drain current of 18A. This device is available in a TO-220 package.

This power MOSFET works on the principles of an insulated gate bipolar transistor (IGBT). It is a voltage-controlled FET that uses the electric field between a metal gate and the depletion layer of a PN junction to modulate the flow of current between the source and drain. The gate of the MOSFET is connected to a voltage source. When a voltage is applied to the gate, it creates an electric field that changes the conductivity of the channel, thus controlling the amount of current. When the voltage applied to the gate is greater than the threshold voltage, the channel becomes conductive, allowing current to flow from the source to the drain. When the voltage applied to the gate is less than the threshold voltage, the channel becomes non-conductive, preventing the flow of current.

The SI4682DY-T1-GE3 is characterized by low turn on and turn off switching losses, and supports fast switching speeds due to its optimized Rds(on). It is also designed with improved noise immunity, low losses at high temperatures, and lower gate charge than competing products. It is also designed with built-in body diode that provides protection during reverse polarity applications.

The SI4682DY-T1-GE3 is an ideal choice for applications such as low-side and high-side switch configurations, DC-DC converters and switching regulators, motor control applications, Buck, Boost and Buck-Boost converters, and power switching. With its high current, low on-resistance, and improved switching performance, it is well-suited for applications in the automotive and industrial markets.

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