SI7119DN-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7119DN-T1-E3 is an integrated N-Channel MOSFET that is used in a wide range of applications, such as power management and switching. This component is a critical component in any electronics project; it helps to provide efficient and reliable power handling by regulating the flow of electricity from the power source to the device it is powering.

The SI7119DN-T1-E3 is a n-channel enhancement mode transistor that is manufactured using the D-MOS (Siemens process). This component features an embedded power MOSFET cell with excellent power losses that implies superior performance even in extreme conditions. This component is capable of supporting currents up to 21 Amp and comprises of a VDSS voltage that is rated up to 30 volts. This component has a drain-source on-resistance of 75milli-ohm which, in combination with its low sum of output capacitance, makes it more suitable for high speed switching applications.

The SI7119DN-T1-E3 component is capable of operating in temperatures ranging from -40 to +125 degree Celsius, thereby making it a safe and reliable power management component even when operating in extreme temperatures. Additionally, this component has excellent thermal performance and offers stable switching performance that is consistent even in the presence of power regulation spikes. This component is designed with a voltage compensation network that is integrated into the package set, thereby offering a reduced output capacitance and superior switching performance for high speed power MOSFET applications.

The SI7119DN-T1-E3 is an ideal component for applications such as DC to DC converters, power management, load switching and amplitude modulation. This component is also suitable for applications such as battery management, automotive applications, motor control and power device switching. This component is also capable of handling any kind of transient current surge or voltage dip due to its symmetric design structure.

The working principle of the SI7119DN-T1-E3 component is based on the same principle of a basic MOSFET (metal-oxide-semiconductor field-effect transistor). This component works by controlling current flow between the drain and source terminals using the gate pin. When the gate voltage is zero, it results in a depletion mode of the channel region between the drain and source and the MOSFET acts as an open switch, preventing current flow between these terminals. When the drain pin receives a positive voltage, the channel region is created and the voltage on the gate pin is utilized to control the current path between the drain and source.

The SI7119DN-T1-E3 is an excellent choice for any power management, switching or load management application due to its low sum of output capacitance, reduced power losses and excellent thermal performance. The symmetric design structure of this component also makes it suitable for handling any current surge or voltage dip, ensuring stable and reliable performance at all times. This component is rated up to 30 volts and is capable of handling currents up to 21 in a cost effective package.

The specific data is subject to PDF, and the above content is for reference