SI7160DP-T1-E3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Ta), 27.7W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2970pF @ 15V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	66nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	8.7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI7160DP-T1-E3 Application Field and Working PrincipleAs a power supply element widely used in switching power supplies, inverters and other electronic device applications, a SI7160DP-T1-E3 (referred to as T1-E3) is a low-cost, highly reliable, rugged and innovative P-FET (Power-FET). The T1-E3 is designed to be rugged and reliable enough to operate under extreme conditions, including high-temperature, high-humidity and high-vibration environments. In addition to providing a better thermal performance, the T1-E3 also has a wide voltage range and very low on-resistance.The T1-E3 features an insulated gate bipolar transistor (IGBT) structure, which is separated by an insulated gate between the source and drain. In this way, it can control the drain current by modulating the gate voltage. In addition to this feature, the T1-E3 utilizes high-voltage gate oxide layer, which can withstand higher gate voltage than standard gate oxide layer, greatly increasing its voltage and power rating. The T1-E3 is widely used in transmission systems, computing systems, industrial control systems and domestic appliances. In transmission systems and computing systems, the T1-E3 can be used as a switch for controlling signals, for circuit protection and for speed and position control in servo systems. For industrial control systems, the T1-E3 can be used to control the speed and direction of motors, as well as in robotic systems. In domestic appliances,the T1-E3 can be used to control the fan speed or switch on/off devices such as microwave ovens and washing machines.In operation, the T1-E3 is turned on when the gate voltage is greater than the threshold voltage and turns off when the gate voltage is less than the threshold voltage. The gate voltage controls the on/off state of the device and the threshold voltage determines when the device transitions between its two states. When the T1-E3 is turned on, the drain current flows through the source terminal to the drain terminal. The voltage between the source terminal and the drain terminal is the drain-source voltage (Vds), which is proportional to the current flowing through the device. The advantages of the T1-E3 lies in its high power-handling capability and low capacitance, making it suitable for high-frequency applications. It also has a wide voltage range and a very low on-resistance, making it well-suited for automotive and industrial applications.In summary, the T1-E3 is a highly reliable, rugged and versatile insulated gate bipolar transistor that can be used in a wide range of applications, from transmission systems to domestic appliances. Its features, such as its wide voltage range, high power-handling capability and low on-resistance, make it well suited for the demanding environment of industrial and automotive applications. Its high voltage gate oxide layer also increases its robustness and reliability in the presence of extreme conditions.

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