SI7186DP-T1-GE3

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The SI7186DP-T1-GE3 is a N-Channel Enhanced Ultrathin Power MOSFET with an exceptionally low “on-resistance”, “on-resistance per unit area”, drain-source resistance and gate charge. The device has an optimized body-tie design for extremely low thermal resistance and is ideal for high power efficiency applications.

The device features an advanced silicon-on-insulator (SOI) process and the advanced Ultra-Thin Cell Lateral Diffused MOSFET (UTLDMOS) technology that reduces the drain-source on-resistance by more than 50%. The SI7186DP-T1-GE3 also features low input and reverse buffer drain-source capacitance compared to other MOSFET technologies, as well as power supply rejection ratio, transient response and immunity to latch-up.

The SI7186DP-T1-GE3 is designed to provide the highest levels of performance in mobile power solutions in switch-mode and linear applications. It is an excellent choice for moderate to high power levels, high power density designs and applications requiring very low “on-resistance” and low source-drain capacitance. The device is available in a standard TO-220 package and delivers excellent power efficiency in a small package.

The working principle of the SI7186DP-T1-GE3 N-Channel Enhanced Ultrathin Power MOSFET is the same as that of other MOSFETs. It has a gate, a source, and a drain, between which there is a semiconductor layer. When a gate voltage is applied to the gate, it creates an electric field that changes the conductivity of the semiconductor layer, which in turn modulates the current flow between the source and drain. In this way, the device acts as an electronic switch, allowing current to flow when a certain voltage is applied to the gate, and preventing current to flow if the voltage is not applied.

Applications of the SI7186DP-T1-GE3 include power management, energy efficiency, and power conversion in mobile and consumer electronics, embedded systems, automotive, and industrial applications. This includes voltage regulation, switching, and power modulation in DC-DC converters, switching, and power modulating in motor control, and variable load current control in intelligent power switches and load switches.

The SI7186DP-T1-GE3 is a N-Channel Enhanced Ultrathin Power MOSFET that offers improved switching performance, low input capacitance and reduced on-resistance compared to traditional MOSFETs. With its low on-resistance, low input capacitance, and very low thermal resistance, this component is ideal for high power density applications. Furthermore, its excellent thermal and electrical performance make it very suitable for use in a wide range of mobile and embedded applications.

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