SI7104DN-T1-E3

Vgs(th) (Max) @ Id:	1.8V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2800pF @ 6V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	3.7 mOhm @ 26.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI7104DN-T1-E3 is a single N-channel enhancement mode field effect transistor (N-FET) specifically designed for use in high power, low noise, low voltage, small form factor devices. It is ideal for applications where low RDS-on, high switching speed and long operation lifetimes are essential. This device is frequently used in power control, switched power amplifiers, RF power switches, relays, battery management, touch pads and switches, and in many other applications where low power is required.The SI7104DN-T1-E3 is an N-channel MOSFET with a maximum drain-source voltage of 20V and a maximum drain current of 10A. It has a low saturation voltage and a very high switching speed, which makes it excellent for applications where low power and fast operation are required. It also has a low RDS-on, making it more efficient and reliable than other FETs, and a high breakdown voltage which allows it to withstand high voltages.The SI7104DN-T1-E3 utilizes a specific process technology that combines high-performance polysilicon (Poly-Si) thin-film transistors (TFTs) with a thin-film insulation layer and low-resistance metal interconnects to form the device. This technology provides the device with outstanding switching characteristics, high reliability, and low power consumption.The device works by controlling the flow of current between the source and drain electrodes. When a voltage is applied to the gate, it creates a conductive channel between the two electrodes, which allows the current to flow. As the voltage increases, the resistance between the source and drain decreases, allowing more current to flow. This, in turn, increases the power capabilities of the device.The SI7104DN-T1-E3 is capable of being applied across a wide range of applications, including automotive, industrial, and consumer electronics. It is commonly used in DC/DC converters, switched power amplifiers, motor control, and in many other applications. In automotive situations might include ABS braking systems, vehicle CAN bus or Ethernet bus communication systems, ESP systems and headlight dimmers.Due to its low RDS-on, high switching speed and other features, the SI7104DN-T1-E3 is suitable for use in many high-power, low-noise, low-voltage devices and systems. With the addition of its high reliability and performance, the device is quickly becoming a popular choice for many power control applications.

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