Allicdata Part #: | SI7113ADN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7113ADN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 10.8A 1212-8 |
More Detail: | P-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount... |
DataSheet: | SI7113ADN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 27.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 515pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 132 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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The SI7113ADN-T1-GE3 transistor is a large-sized MOSFET in a single package, with dual gate and an overall gate current of 1A. It has a wide range of applications in various industries and is used primarily for switching and switching-related applications.The main components of the SI7113ADN-T1-GE3 transistor are its dual gates, body diode, gate electrodes, source and drain electrodes, gate voltage circuit and its associated circuitry. The dual gates form the basic building block of the device, while body diode, gate electrodes and source and drain electrodes provide electrical connections between the dual gates. Gate voltage circuit is responsible for controlling the gate current, while source and drain electrodes provide connections to the corresponding terminals of the device.The working principle of the SI7113ADN-T1-GE3 transistor is based on the controllable channel formed between the source and drain electrodes. This channel is controlled by the application of a bias voltage at the gate electrodes. When the threshold voltage (Vgs) is applied to the gate electrode, the conduction channel between the source and drain electrodes is turned on and the device behaves like a switch.The SI7113ADN-T1-GE3 transistor is primarily used in high frequency switches, power converters and switching-related applications such as switching of power supplies and controlling the speed of high power motors. It is ideal for controlling high frequency applications where the switching characteristics of the device are important.The SI7113ADN-T1-GE3 transistor offers a wide range of features and advantages for users. It is highly efficient in terms of power consumption; it is relatively immune to radiation and can be used in high-radiation environments; it has low on-resistance and enables high-performance switching; and it has high suspended gate capacitance and can be used to control lower frequency signals.Overall, the SI7113ADN-T1-GE3 transistor is a reliable and cost-effective device for controlling switching and switching-related applications. It is an ideal choice for a variety of high frequency applications, power converters and switching-related applications. It is also highly efficient and can withstand radiation that may be encountered in certain environments.
The specific data is subject to PDF, and the above content is for reference
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