| Allicdata Part #: | SI7100DN-T1-GE3-ND |
| Manufacturer Part#: |
SI7100DN-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 8V 35A PPAK 1212-8 |
| More Detail: | N-Channel 8V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface ... |
| DataSheet: |  SI7100DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3810pF @ 4V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 8V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 15A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 8V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI7100DN-T1-GE3 is a single N-Channel enhancement mode power field effect transistor (FET) from Vishay Siliconix. The device offers monolithic integration of an N-channel FET and a 1.0A on-chip protection with stable performance. The device has a low on-resistive RDS(on) of 10Ω, a SO-8 packaged power surface mount for automotive environment; operate from -55 to 150℃ and offers a typical output current of 4.5A. With this package and integrated function, it is suitable for automotive applications and battery powered systems.
Features
- Suitable for automotive and battery powered system applications.
- Highest Packing density achieved through integration.
- Integrated design with low on-resistive RDS(on).
- Built-in current limitation.
- Stable operation over temperature range of -55 to 150℃.
- SO-8 packaged power surface mount for automotive environment.
Applications
The SI7100DN-T1-GE3 is suitable for automotive and battery powered system applications, including motor control, gate drive, and switch, such as- Power Management
- Load Switching
- Communication Equipment
- Commercial Equipment
- Consumer Electronics
- Industrial Equipment
- Medical Equipment
- Robotics
Working Principle
A power FET is a transistor with a very high input impedance, allowing it to accept a signal or voltage applied to its gate and pass current between its source and drain when the signal is high enough. The FET is usually operated in either enhancement mode or depletion mode. In enhancement mode, the FET is in an “off” state below the threshold voltage, where source and drain are not connected, allowing almost no current flow. When the input voltage exceeds the threshold, the FET is said to be “turned on” and a current begins to flow between the source and the drain. The SI7100DN-T1-GE3 follows this type of operating principle. In its off state, it offers an ultra-low on resistance of 10 ohms, allowing for the current to be easily switched off and on when the input voltage exceeds the threshold. It also offers an integrated 1.0A protection and can be operated from -55 to 150℃.Conclusion
The SI7100DN-T1-GE3 is a single N-Channel enhancement mode power field effect transistor (FET) from Vishay Siliconix. It is suitable for automotive and battery powered system applications due its low on-resistive RDS(on), integrated 1.0A protection, and its capability to be operated from -55 to 150℃. Additionally, its SO-8 packaged power surface mount for automotive environment maximizes the packing density achieved through integration.The specific data is subject to PDF, and the above content is for reference
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