SI7138DP-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7138DP-T1-E3 is a single N-Channel 125 mA (Max.) enhanced strain gate MOSFET. This type of MOSFET possesses very low gate input capacitance and remarkable low threshold voltage of 0.90 V (Min.). It also features a low on-resistance of 25 ohms (Max.) and low drain source capacitance. This product exhibits low gate input capacitance, fast switching times and low on-state resistance.

This enhanced strain gate MOSFET is suitable for use in wide range of applications such as load and line switching, general purpose switching and low voltage analog circuit switching as well as in power management and dc-dc converters. Generally speaking, any application that requires low gate capacitance and on-resistance can benefit from this type of MOSFET.

As with any MOSFET, the SI7138DP-T1-E3 works on the principle of controlling the current that passes through a semiconductor by using an electric field. An electric field is created by applying a voltage to the gate terminal. When a voltage is applied to the gate terminal, it creates an electrostatic field that attracts electrons from the negatively charged source. The electrons move from the source to the drain, generating an electric current.

The electric current that passes through the MOSFET is controlled by the size of the electric field created by the gate voltage, resulting in the transistor\'s resistance being altered. Instead of a gate controlling the flow of electrons like a traditional transistor, MOSFETs inherently possess a much higher degree of control over the current. This makes them ideal for a wide range of applications such as switching load, line and low voltage analog circuits.

The SI7138DP-T1-E3’s enhanced strain gate MOSFET technology achieves very low off-state leakage, fast switching times and low on-state resistance. It also exhibits a low gate input capacitance, which allows it to work more efficiently than traditional MOSFETs. Additionally, the built-in strain relief in the gate helps keep the device more reliable over time.

The SI7138DP-T1-E3 offers a maximum continuous drain current of 125 mA and a maximum drain-source voltage of 16 V. It is capable of switching frequencies up to 100 MHz and has a reverse standing gate leakage current of 1.2 µA. Its rise and fall times are 5 ns and 10 ns respectively, making it suitable for various applications requiring high switching speeds.

In conclusion, the SI7138DP-T1-E3 is a single N-Channel 125 mA (Max.) enhanced strain gate MOSFET that works on the principle of controlling the electric current that passes through a semiconductor by using an electric field. Its features include a low input capacitance, low on-resistance and fast switching times, making it a great choice for a wide range of applications. It is capable of handling a maximum drain-source voltage of 16 V and has a reverse standing gate leakage current of 1.2 µA, making it suitable for use in high frequency applications.

The specific data is subject to PDF, and the above content is for reference