SI7100DN-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7100DN-T1-E3 is an n-channel power MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, which has a large drain-source breakdown voltage rating and an enhanced Avalanche ruggedness. It is designed for high-side load switching applications, including motor control, lighting control, low-side switch, and solid state relay, among others. With the use of this transistor, it is possible to build efficient, reliable and cost-effective switching solutions. The SI7100DN-T1-E3 is manufactured using advanced CMOS process technology and is available in a TO-220-3L package.

The SI7100DN-T1-E3 is a power MOSFET with an N-Channel MOS type structure. It is composed of a series of semiconductor layers, fabricated by oxide layers, between the source and drain. The oxide layer creates a strong electric field, which changes the conductivity of the semiconductor layers to form the transistor. The semiconductor layers form a closed electrical circuit between the source and drain, and when the gate of the transistor is charged, the current flows from the source to the drain.

The SI7100DN-T1-E3 has a drain-source breakdown voltage of 100 volts, which is enough to support most high-side load switching applications. Its maximum drain current is 24A, and its maximum power dissipation is about 95 watts. The transistor has a minimum thermal resistance of 0.7°C/W, which reduces the amount of heat generated when the power supply is turned on and off. The device also has an adjustable gate threshold voltage and is protected against input voltage breakdown at gate-source level.

The SI7100DN-T1-E3 is primarily used in high-side switching applications. It can be used to switch high-power loads, such as motors and lighting. It can be used as a low-side switch or as part of a solid state relay. The low on-resistance of the transistor allows it to effectively switch the load quickly and efficiently, while the adjustable gate threshold voltage allows precise control over the switching. The integrated protection circuitry makes the transistor good for controlling high voltage applications. This makes it an ideal choice for motor control, lighting control and solid state relays.

The SI7100DN-T1-E3 is a relatively low-cost solution for high-side load switching applications. It provides an efficient and reliable way to switch high-current and high-voltage loads. Its low on-resistance of the transistor combined with its adjustable gate threshold voltage provides precise and efficient control in switching applications. The integrated protection circuitry makes it a good choice for controlling high voltage applications. With the use of the device, it is possible to build cost-effective and reliable switching solutions.

The specific data is subject to PDF, and the above content is for reference