| Allicdata Part #: | SI7192DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SI7192DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 60A PPAK SO-8 |
| More Detail: | N-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surfa... |
| DataSheet: |  SI7192DP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SI7192DP-T1-GE3 is a high performance, logic level, N-channel MOSFET transistor. It has a low ON-resistance, high current handling capability and the lowest gate charge of any FETs. It is ideal for high performance switched applications such as power converters and switching power supply circuits. This article will discuss the application fields and working principle of the SI7192DP-T1-GE3.The SI7192DP-T1-GE3 is a logic level N-channel MOSFET transistor. It is designed for use as a switching device in applications where the transistor can be used to switch large currents. The transistors have an incredibly low ON-resistance and a high switching speed. This makes them ideal for high performance switched applications.The SI7192DP-T1-GE3 is commonly used for switched power supply circuits. It can be used as a high-side driver, low-side driver, or load switch. When used as a high-side driver, the MOSFET transistor can switch large currents. When used as a low-side driver, the transistor can switch small currents. The transistor also works well as a load switch, as it can switch large currents but with a relatively low gate charge.The working principle of the SI7192DP-T1-GE3 is based on the MOS Field Effect Transistor (MOSFET) theory. The transistor consists of four terminals - the source, drain, gate, and body. The source terminal is used to connect a voltage source, while the drain terminal is used to connect a load. The gate terminal is used to control the flow of current by changing the voltage. The body terminal is not used.When a voltage is applied to the gate terminal, it creates a gate-to-source capacitance (CGS). This capacitance changes the voltage in the source terminal, thereby changing the probability of electrons to flow through the channel. When a high voltage is applied to the gate, it creates a strong electric field which pushes the electrons to the source terminal and the device turns on. This is the principle behind the switching capabilities of the SI7192DP-T1-GE3.In summary, the SI7192DP-T1-GE3 is a high performance, logic level N-channel MOSFET transistor. It is commonly used as a switching device in power supply circuits and switched applications. The transistor has an incredibly low ON-resistance and a high switching speed. The working principle of the transistor is based on the MOSFET theory, wherein a voltage applied to the gate creates a gate-to-source capacitance which changes the voltage in the source terminal, thereby changing the probability of electrons to flow through the channel. This is what enables the transistor’s switching capabilities.The specific data is subject to PDF, and the above content is for reference
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