SI7138DP-T1-GE3

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The SI7138DP-T1-GE3 is a single N-channel enhancement mode power field-effect transistor (MOSFET) especially suitable for driving inductive loads, such as relays, solenoids and motors, in applications requiring both low on-state resistance (RDS(on)) and fast switching times. Additionally, it is also suitable for LED lighting applications.

The SI7138DP-T1-GE3 is housed in a compact, 8-pin SOIC package, which reduces board space and is an economical solution for applications that require space savings. It also has an operating temperature range from -55°C to 175°C, making it suitable for extreme environmental conditions.

The SI7138DP-T1-GE3 is based on an advanced vertical trench technology that uses a control electrode gate to control the flow of current through the body, or channel, between the source and drain. This type of MOSFET is classified as an enhancement mode device because no gate voltage is required to turn it on (source-drain current will still flow with a zero gate voltage). This type of MOSFET can handle higher peak voltages than their depletion mode counterparts, which require a negative voltage applied to the gate in order to turn them on.

When a positive gate-to-source voltage is applied, the channel turns on, allowing a current to flow from source to drain. As the voltage on the gate increases, so does the channel conductivity and current in the channel increases. This is known as the “linear region” of operation. When the gate-to-source voltage reaches a certain level, the channel becomes fully on and the device is said to be in the “Saturation” region, where the current in the channel remains constant regardless of the gate voltage.

Due to its high switching speeds, fast turn-on/off times and low RDS(on), the SI7138DP-T1-GE3 is particularly well suited for applications that require high efficiency, high surge, and reduced EMI noise such as switching power supply, inductive loads, LED lighting, motor controls, and other such applications. Additionally, it is stable when exposed to large transient transients, produces less switching losses in comparison to other types of MOSFETs, and its high SOA (Safe Operating Area) allows it to handle large current surge.

In conclusion, the SI7138DP-T1-GE3 is an ideal choice for a variety of applications due to its low on-state resistance, fast switching times and suitability for extreme environmental conditions. It is also a cost effective solution for applications requiring space savings. Therefore, it is suitable for a wide range of applications including switching power supplies, inductive loads, motor controls, and LED lighting.

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