SI7120DN-T1-E3

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The SI7120DN-T1-E3 is a single-channel, high-voltage power MOSFET device designed to provide exceptional performance in a variety of demanding applications. It is particularly suited for switching high-voltage high-speed power circuits, where lower output losses and a more efficient energy use are desired. In addition, the device offers controlled operation for better current ripple and improved output power in AC applications.

Application Field of SI7120DN-T1-E3

The SI7120DN-T1-E3 is a high-voltage, high-speed power MOSFET device ideally suited for switching power circuits. It is used in many industrial applications and is particularly useful for the free-running and the synchronous applications. Synchronous switching is achieved by controlling the rising and falling edges of the gate voltage. This enables faster switching times and an increased control over the current ripple of the switching circuit.

The SI7120DN-T1-E3 can handle currents up to 2A and voltages up to 300V. It also offers low On-resistance and low gate-to-drain capacitance. This makes it an ideal choice for a variety of applications, such as high power AC/DC power supplies, switch mode power supplies, battery chargers, DC/DC converters, automotive applications, motor control circuits and solar cell power conversion circuits.

Working Principle of SI7120DN-T1-E3

The SI7120DN-T1-E3 is a high-voltage, high-speed power MOSFET, which is based on a two-transistor drive cell. This two-transistor cell reduces the drive loss by reducing the junction capacitance between the drain and the gate during the rising and falling edges of the voltage waveforms. The two-transistor cell also allows for faster switching times, low output losses and improved reliability.

The SI7120DN-T1-E3 uses a specially designed logic-level gate structure which allows for better control of both rising and falling edges. This helps to reduce the input capacitance and the gate resistance, allowing a faster switching time and higher efficiency. The device also features a special low saturation voltage which helps to reduce the power dissipation and provide better current utilization.

The device includes a temperature sensor which helps to provide thermal protection. The temperature sensor is used to detect and counteract any effects caused by vibrations or overheating. This helps to ensure reliable operation of the device in high power applications.

The SI7120DN-T1-E3 is available in a variety of package options to suit different applications. The TO-252 and DFN8 packages enable a higher power density and enhance the integration of the device in designs.

Conclusion

The SI7120DN-T1-E3 is a high-voltage, high-speed power MOSFET designed to help improve efficiency in power switching applications. The device is offered in a range of packages and has special features such as a logic-level gate structure and a temperature sensor for better control and reliability. The SI7120DN-T1-E3 is an ideal choice for power switching applications including AC/DC power supplies, switch mode power supplies, battery chargers, DC/DC converters, automotive applications and solar cell power conversion circuits.

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