SI7101DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7101DN-T1-GE3 is a single-channel, enhancement mode enhancement mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is designed to switch very high voltage at a high frequency and with low static power consumption. This makes it an ideal solution for applications that require low on-resistance and high power efficiency. It is able to handle up to 60V of drain-source voltage and up to 10A of drain current.

In a traditional MOSFET, the gate forms an oxide layer between the source and the drain. When a voltage is applied across this oxide layer, it creates an insulation or a barrier that prevents the flow of current. This is the basic principle of the MOSFET.

The SI7101DN-T1-GE3 utilizes an innovative design to provide superior performance and flexibility. It includes a special “interconnect element” or “gate pad” that provides better signal integrity, low oscillation, low static power consumption, and improved signal-to-noise ratio. Additionally, it has a low threshold voltage, allowing it to switch high voltages quickly while maintaining low power consumption. This makes it an ideal choice for applications in consumer electronics and high voltage power supplies.

One of the primary applications of the SI7101DN-T1-GE3 is in high voltage power supplies. Since it is able to handle very high voltages with low static power consumption, it is an excellent option for DC-DC converter designs. It is also used in high voltage devices that require fast switching times while maintaining low power consumption, such as inductor-based switching power supplies and motor control circuits. Additionally, it is well-suited for precision control and measurement circuits, such as servo motors, where fast switching and low noise operation is necessary.

The SI7101DN-T1-GE3 is also used in low voltage applications, such as automotive and home security systems. Since it is able to switch very low voltages with high accuracy, it is ideal for these applications. It is also capable of operating as an amplifier, allowing it to be used as an input to an audio system or a microphone input. Additionally, it is used in radio frequency (RF) amplifiers and modulators, where it can provide fast and accurate modulation of signals.

One major benefit of using the SI7101DN-T1-GE3 is its ability to operate in a wide range of temperatures. It is able to operate in temperatures ranging from -40°C to +125°C, making it suitable for applications in a variety of environments. Additionally, it is highly resistant to voltage surges, which makes it well-suited for use in high voltage applications.

Overall, the SI7101DN-T1-GE3 is a versatile single-channel, enhancement mode MOSFET that can switch both high and low voltages with very low static power consumption. It is highly durable, able to operate in a wide range of temperatures, and resistant to voltage surges. This makes it a great choice for applications in power supplies, motors, amplifiers, security systems, and more.

The specific data is subject to PDF, and the above content is for reference