SI7108DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7108DN-T1-GE3 is a low-voltage, low-current single N-Channel Enhancement Mode MOSFET from Vishay. It is primarily used as a pass transistor in power management applications and has a very low Rds(on) of just 0.35mΩ. It is available in D2-Pak, D-Pak and APM package options to ensure maximum integration for space-restricted applications.

The SI7108DN-T1-GE3 features a very low Rds(on) that allows it to be used effectively in a variety of power management applications. For example, the device can be used as a pass transistor in battery management and power supply applications, allowing the device to pass direct current (DC) quickly while operating in a low-power state, making it a very efficient power management device. The device can also be used as a linear regulator, where it is used to maintain a constant output voltage as input voltages vary. The low Rds(on) ensures that the device can effectively regulate the voltage, reducing power consumption and increasing efficiency.

The device is also used in high-current DC-DC (HCDD) applications, where it provides an efficient transfer of current between the power sources. The SI7108DN-T1-GE3 is a relatively low-cost device, which makes it attractive for use in cost-sensitive applications. Additionally, the device is available in a variety of packages, making it suitable for integration into any application.

The main working principle of the SI7108DN-T1-GE3 is based on a MOSFET transistor, where the gate voltage controls the current flow between the source and drain electrodes. When the device is switched on, current flows through the transistor, allowing it to act as a simple pass transistor. The device is also able to regulate the current flow by varying the gate voltage, allowing it to act as a linear regulator or can be used in HCDD applications. The low Rds(on) of the device ensures an efficient transfer of current, increasing power efficiency and reducing power consumption.

The SI7108DN-T1-GE3 is a very versatile device that is suitable for use in a variety of power management applications. The low power consumption and low Rds(on) make it an ideal choice for cost-sensitive projects, while the variety of package options ensure that it can be easily integrated into any design. The main working principle of the device is based on a MOSFET transistor, making it a very effective pass or linear regulator device, as well as an efficient DC-DC device.

The specific data is subject to PDF, and the above content is for reference