SIA907EDJT-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIA907EDJT-T1-GE3TR-ND |
Manufacturer Part#: |
SIA907EDJT-T1-GE3 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 4.5A SC-70-6L |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.5A (Tc) 7.8W... |
DataSheet: | SIA907EDJT-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.13476 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Rds On (Max) @ Id, Vgs: | 57 mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 7.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
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SIA907EDJT-T1-GE3 is a powerful array of field-effect transistors (FETs) used in many electronic applications. It is a standard part of many electronic designs, and its specific application requirements vary depending on the context and purpose. In its most basic form, it is an array of multiple transistors connected in series with a single gate line. As transistors are inherently current-controlled devices, the combined action of multiple transistors in a single array can significantly boost the overall effect. The number of transistors used in the array will depend on the specific application and requirements.
The SIA907EDJT-T1-GE3 array utilizes the Field Effect Transistor (FET) to control devices in a wide range of applications. This specific array contains thirty-two transistors and is designed with a single gate line to connect each element in the array in series. Each of the FETs in the array is rated for a total of 5.5A, which gives the SIA907EDJT-T1-GE3 array an overall power handling capability of 176A.
The device also features a built-in soft shutdown mechanism, which means that an external resistor or capacitor is not required. This feature is useful in designs where extra protection needs to be applied to safeguard the device from false triggering or power surges. The SIA907EDJT-T1-GE3 also provides high-frequency switching, which can be beneficial to applications requiring fast switching operations.
The working principle of the SIA907EDJT-T1-GE3 can be described as follows. When the voltage applied to the source line of the FET array is greater than the voltage applied to its gate line, the corresponding FET will be “on” and allow current to pass from its source to its drain. Conversely, if the voltage applied to the gate line is greater than that applied to its source line, the corresponding FET will be “off” and will block current from passing from the source to the drain. This is the basic principle that allows the FETs in the array to provide high-speed switching and control capabilities. This is also the principle behind the soft-start mechanism that prevents power fluctuations from exposing the device to false triggering or other hazards.
SIA907EDJT-T1-GE3 is a versatile FET array suited to a wide variety of applications, ranging from simple power control, to performing high-frequency operations. Its single gate line and built-in soft-start feature add extra flexibility and make it a favorite in many electronic design projects. Its superior performance and long life make it an invaluable tool in electronic applications.
The specific data is subject to PDF, and the above content is for reference
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