Allicdata Part #: | SIA917DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA917DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 4.5A SC70-6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.5A 6.5W Surf... |
DataSheet: | SIA917DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | SIA917 |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Package / Case: | PowerPAK® SC-70-6 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 6.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 2.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SIA917DJ-T1-GE3 Application Field and Working Principle
The SIA917DJ-T1-GE3 is a type of Trench Metal-Oxide-Semiconductor Logic (TMOS) Field-Effect Transistor (FET) Array. As a floating-gate FET array, these devices have unique qualities that allow for efficient and flexible performance for a variety of applications.
These arrays are composed of individual transistors on an array of transistors. Each transistor is connected to a logic gate, and the transistors on the array can be controlled by applying or removing a voltage to the gate. With the application of the voltage, a change in the electrical characteristics of the transistor can be achieved, whereupon its switching capabilities become possible. The transistors can be wired either in parallel or cascade configuration for different types of applications.
The SIA917DJ-T1-GE3 has many advantages. One is its use as low-power circuits. This is because the amount of power consumed by the array is not high, since the voltage applied to the gate is controlled. This reduces heat buildup in the circuit, which is beneficial to other components in the system. As an additional advantage, the SIA917DJ-T1-GE3 array is relatively inexpensive, making it an attractive option for many applications.
The applications of the SIA917DJ-T1-GE3 array are numerous. One of its most common uses is in amplifier circuits. By controlling the voltage applied to its gates, signals can be amplified or decreased as desired. Furthermore, because of its flexibility, SIA917DJ-T1-GE3 can also be used in digital circuits, frequency multipliers, logic circuits, and pulse-width modulation control applications.
The working principle of the SIA917DJ-T1-GE3 is fairly simple. When a particular gate voltage is applied, the electrical characteristics of the transistor change, allowing signals to be processed or modified. When the current is then removed, the transistor resets back to its original state. In this way, the SIA917DJ-T1-GE3 can be used to amplify, decrease, and otherwise modify signals as desired.
Overall, the SIA917DJ-T1-GE3 is an excellent option for modern applications. Its low power requirements and its versatility make it a great choice for a variety of applications. From amplifiers to digital and logic circuits, the SIA917DJ-T1-GE3 can handle the task.
The specific data is subject to PDF, and the above content is for reference
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