SIA914ADJ-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SIA914ADJ-T1-GE3 is an advanced DPAK surface-mountable array FET. It has a low input capacitance, low gate threshold voltage, and a low on-resistance. With a wide variety of applications, this device is well suited for a range of industries and applications, including power management, analog switching, communications boards, and more.

The SIA914ADJ-T1-GE3 array FET is supplied in an incredibly small surface-mount package that provides a low thermal resistance and low input capacitance. Low gate threshold voltage is achieved with the device, while on-resistance is reduced further by employing an advanced process that enables high-density designs.

The SIA914ADJ-T1-GE3 is ideal for applications where low on-resistance and low input capacitance are important. It is designed to switch on and off quickly and can be used in applications such as motor control and switching circuits. It also features low gate-to-source capacitance, allowing it to rapidly transfer charge.

The SIA914ADJ-T1-GE3 is constructed using a versatile combination of MOSFET and BiCMOS components. The dual gate MOSFET is suitable for higher speed switching and can often improve switching performance over traditional semiconductor components. The BiCMOS is used to extend the range and reduce switching speed.

The SIA914ADJ-T1-GE3 is a sensitive device, and can be easily damaged if not handled with care. Because the device is extremely small, it is important to use the proper techniques when handling the array FET. This includes using ESD (electro-static discharge) protection, as well as using a static-free work area.

When handling the SIA914ADJ-T1-GE3, it is important to always wear an ESD wrist strap to prevent any static electricity from damaging the device. The device must also be inserted into the circuit board in the proper direction, as mating terminals are clearly marked on the device itself.

In terms of its working principle, the SIA914ADJ-T1-GE3 has two logic gate inputs and two source/drain outputs. When a logic signal is applied at the logic gate inputs, an electrical field is generated at the MOSFET gate. This allows electrons to flow through the device, resulting in low on-resistance when the gate is at a low voltage. When the gate is at a high voltage, the on-resistance of the device is increased, allowing it to act as a switch.

The SIA914ADJ-T1-GE3 array FET is suitable for a range of applications. Its low input capacitance and low gate threshold voltage make it ideal for power management, analog switching, communications boards, and other applications. It is also capable of rapidly transferring charge, which can be beneficial for high speed switching applications.

The specific data is subject to PDF, and the above content is for reference