SIA913ADJ-T1-GE3 Discrete Semiconductor Products

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The SIA913ADJ-T1-GE3 is a BCD technology transistor array consisting of four N-channel MOSFETs. It’s a specialized transistor array designed with optimized performance for power management applications. It’s ideal for powering high-performance logic and low voltage switching applications, as well as digital control and power management. This transistor array features excellent RDS (on) performance as well as low On-resistance for excellent power efficiency. The SIA913ADJ-T1-GE3 also features an adjustable gate-threshold voltage for improved reliability.

Application Field

The SIA913ADJ-T1-GE3 is most commonly used in the power management and control applications. It’s typically used in high-frequency switching applications and digital control applications. It’s also used in power conversion systems, power supplies, LED driver circuits, and other industrial and automotive applications.

The SIA913ADJ-T1-GE3 can be used to power logic circuitry, as well as to control the switching of high-current loads. It’s capable of driving up to 3A of current with very low On-resistance. This makes it ideal for power management applications such as battery charging and power conversion systems. Additionally, the adjustable gate-threshold voltage makes it suitable for situations where varying voltage levels are present.

Working Principle

The working principle of the SIA913ADJ-T1-GE3 is based on the four N-channel MOSFETs it contains. Each of these MOSFETs has its own isolated gate and drain, and a common source connection. When a positive voltage is applied to the gate, it turns on the FET, allowing current to flow between the drain and the source. When the voltage is removed, the FET switches off.

The adjustable gate-threshold voltage allows the user to set the threshold voltage at which the FET switches on or off. This means that the user can select a voltage level that is suitable for the system, allowing the transistor to switch on or off as needed.

The SIA913ADJ-T1-GE3 also features very low On-resistance, allowing current to flow freely without significant voltage loss. This makes it ideal for powering high-performance logic circuitry and controlling high-current loads. It’s also capable of driving up to 3A of current with very low thermal resistance, which makes it suitable for use in high-heat environments.

In summary, the SIA913ADJ-T1-GE3 is a versatile transistor array suitable for a wide range of power management and control applications. It features excellent RDS (on) performance and low On-resistance. The adjustable gate-threshold voltage makes it suitable for use in systems with varying voltage levels. Additionally, it’s capable of driving up to 3A of current with very low thermal resistance, making it suitable for use in high-heat environments.

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