SIA950DJ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIA950DJ-T1-GE3TR-ND

Manufacturer Part#:

SIA950DJ-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 190V 0.95A SC-70-6
More Detail: Mosfet Array 2 N-Channel (Dual) 190V 950mA 7W Surf...
DataSheet: SIA950DJ-T1-GE3 datasheetSIA950DJ-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Base Part Number: SIA950
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7W
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Series: LITTLE FOOT®
Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 950mA
Drain to Source Voltage (Vdss): 190V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIA950DJ-T1-GE3 is a high-performance, low-noise radio frequency-amplifier array specifically targeted for cellular and wireless communications applications. This array contains multiple FETs (Field-Effect Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) in one small package and provides excellent thermal, electrical and mechanical stability while consuming minimal power. It is designed to offer superior performance in a wide range of frequencies, from high to low.

The SIA950DJ-T1-GE3 is an ideal solution for cellular and wireless communication applications which require the ability to amplify small signals without introducing noise or distortion. It is also designed to be mounted on a printed circuit board. This array can also be used in high-sensitivity applications such as motion detectors and imaging sensors.

The SIA950DJ-T1-GE3 is composed of four MOSFET transistor elements which are connected together in a cross-coupled configuration. This arrangement allows the array to achieve a high gain with low noise and low distortion. Each of the four transistors has an individual gate terminal and is further connected to each other with an output terminal.

The signal that is input into the array is first received by the four transistors. This signal is then amplified by the gate circuit, which boosts the current and voltage of the signal. This amplified signal is then realized by the output terminal, where it can be further amplified if needed. Additionally, the gate control of each transistor allows the array to be configured for a broad dynamic range.

Overall, the SIA950DJ-T1-GE3 is an outstanding option for applications which require a low-noise, high-performance amplifier array. Its combination of MOSFETs and FETs allows for superior performance and power efficiency in a wide range of frequencies. Its cross-coupled configuration and gate control features make it ideal for high-sensitivity applications such as motion detectors and imaging sensors. Its low-cost and versatility make it an attractive option for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SIA9" Included word is 29
Part Number Manufacturer Price Quantity Description
SIA911DJ-T1-E3 Vishay Silic... -- 1000 MOSFET 2P-CH 20V 4.5A SC7...
SIA914DJ-T1-E3 Vishay Silic... 0.0 $ 1000 MOSFET 2N-CH 20V 4.5A SC7...
SIA911EDJ-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET 2P-CH 20V 4.5A SC7...
SIA912DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2N-CH 12V 4.5A SC7...
SIA913DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 12V 4.5A SC7...
SIA917DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 20V 4.5A SC7...
SIA914DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2N-CH 20V 4.5A SC7...
SIA936EDJ-T1-GE3 Vishay Silic... 0.0 $ 1000 MOSFET 2N-CH 20V 4.5A SC-...
SIA915DJ-T4-GE3 Vishay Silic... 0.0 $ 1000 MOSFET 2P-CH 30V SC70-6Mo...
SIA914ADJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2N-CH 20V 4.5A SC7...
SIA911ADJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 20V 4.5A SC7...
SIA920DJ-T1-GE3 Vishay Silic... 0.19 $ 1000 MOSFET 2N-CH 8V 4.5A SC-7...
SIA921EDJ-T4-GE3 Vishay Silic... 0.19 $ 1000 MOSFET 2P-CH 20V 4.5A SC7...
SIA915DJ-T1-GE3 Vishay Silic... 0.19 $ 1000 MOSFET 2P-CH 30V 4.5A SC-...
SIA950DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2N-CH 190V 0.95A S...
SIA911DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 20V 4.5A SC7...
SIA918EDJ-T1-GE3 Vishay Silic... 0.13 $ 1000 MOSFET 2N-CH 30V POWERPAK...
SIA907EDJT-T1-GE3 Vishay Silic... 0.15 $ 1000 MOSFET 2P-CH 20V 4.5A SC-...
SIA910EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2N-CH 12V 4.5A SC-...
SIA921EDJ-T1-GE3 Vishay Silic... -- 3000 MOSFET 2P-CH 20V 4.5A SC7...
SIA975DJ-T1-GE3 Vishay Silic... -- 33000 MOSFET 2P-CH 12V 4.5A SC-...
SIA922EDJ-T1-GE3 Vishay Silic... -- 27000 MOSFET 2N-CH 30V 4.5A SC7...
SIA928DJ-T1-GE3 Vishay Silic... 0.13 $ 1000 MOSFET 2N-CH 30V POWERPAK...
SIA931DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 30V 4.5A SC7...
SIA929DJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 30V 4.5A SC7...
SIA906EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2N-CH 20V 4.5A SC7...
SIA923AEDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 20V 4.5A SC7...
SIA913ADJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 12V 4.5A SC7...
SIA923EDJ-T1-GE3 Vishay Silic... -- 1000 MOSFET 2P-CH 20V 4.5A SC-...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics