SIA929DJ-T1-GE3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Rds On (Max) @ Id, Vgs:	64 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	575pF @ 15V
Power - Max:	7.8W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	PowerPAK® SC-70-6 Dual
Supplier Device Package:	PowerPAK® SC-70-6 Dual

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The SIA929DJ-T1-GE3 is a Dual PowerTrench MOSFET Array from Fairchild Semiconductor. It features an exposed drain structure that enables both low on-resistance for fast switching and low threshold voltage for low voltage operations (down to 1.8V). The device has two identical N-channel MOSFETs with matching characteristics and superior matching between them.The SIA929DJ-T1-GE3 offers a wide range of advantages, including a low total gate charge (Q g ), as well as low gate to source capacitance (C gs ) and low output capacitance (C o ). Additionally, its integrated fault protection prevents power-destruction due to electrostatic discharge (ESD) and automatic FaultProtection (FAP). The SIA929DJ-T1-GE3 provides enhanced thermal performance and superior ruggedness, all in a RoHS-compliant package.The SIA929DJ-T1-GE3 is ideal for a variety of applications, including motor driver, DC/DC converters, power supplies, cell phone chargers, and voltage regulator modules (VRMs). Its features make it well-suited for a broad range of consumer, communication, and industrial applications.The working principle of the SIA929DJ-T1-GE3 is simple: when the gate voltage is applied, this causes electrons to flow from the source to the drain. This, in turn, causes current to flow through the drain and source terminals, creating a flow of energy. This energy is used to drive loads such as motors and solenoids.When the gate voltage is removed, the MOSFET acts as an open circuit, and current cannot flow. By altering the applied gate voltage, the current flow through the device can be accurately and precisely controlled, allowing for precise control of the load.The SIA929DJ-T1-GE3 has been designed to provide superior dynamic performance and provide an improved signal-to-noise ratio. Additionally, its low effective capacitance means that the signal can reach the gate terminal faster, and the device can operate more efficiently.The SIA929DJ-T1-GE3 is a great choice for a variety of applications, including motor driver, DC/DC converters, power supplies, cell phone chargers, and voltage regulator modules (VRMs). Its features make it well-suited for a broad range of consumer, communication, and industrial applications. Its wide range of advantages, great performance, and long operational life make it a perfect choice for these types of applications.

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