SIA918EDJ-T1-GE3 Allicdata Electronics

SIA918EDJ-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SIA918EDJ-T1-GE3TR-ND

Manufacturer Part#:

SIA918EDJ-T1-GE3

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V POWERPAK SC70-6
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 4.5A (Tc) 7.8W...
DataSheet: SIA918EDJ-T1-GE3 datasheetSIA918EDJ-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11679
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Description

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The SIA918EDJ-T1-GE3 is a transistor array that utilizes Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) technology. This type of transistor array is commonly used in many types of electronic circuits and has a variety of uses, ranging from powering large-scale industrial applications to providing control over a myriad of small electronic devices. This article will explore the application field and working principle of this particular array transistor.

The SIA918EDJ-T1-GE3 is a three-terminal structure and consists of three FETs and five MOSFETs arranged in a two-stage structure. Each of the three FETs have a gate, source, and drain terminal, while the five MOSFETs have a gate, source, and body terminal. This type of transistor array is ideally suited for low-noise applications, where the FETs provide high-frequency amplifying, while the MOSFETs offer low-noise amplification. In addition, this type of transistor can be used for signal processing as well as active filtering.

The primary application of the SIA918EDJ-T1-GE3 transistor array is for low-power, high-frequency signal conditioning with the FETs providing high-frequency gain, while the MOSFETs provide low-noise filtering and buffering. This type of transistor array is used in many types of electronic systems, such as audio and video electronics, communications systems, medical electronics, automotive electronics, and various other industrial applications. This transistor array can also be used as a replacement for higher power (and higher cost) FET transistors and can often provide the same performance.

The basic operating principle of the SIA918EDJ-T1-GE3 transistor array is that it utilizes the FETs and MOSFETs to amplify an input signal by using the FETs as voltage-controlled resistors and using the MOSFETs as voltage-controlled capacitors. This helps to create a low-noise signal amplification without sacrificing signal integrity. In addition, this transistor array provides a high-impedance input and provides low capacitive loading. This makes it an ideal choice for low-noise signals where its higher impedance values are needed.

The SIA918EDJ-T1-GE3 transistor array can be used in many types of circuits, including amplifiers, low-noise amplifiers (LNAs), low-noise filters (LNFs), audio electronic circuits, video electronic circuits, communications systems, medical electronics, automotive electronics, and various industrial applications. This type of transistor array is relatively easy to use and can be used in most any type of application. It is cost-effective and provides high-frequency performance for low-power applications.

In conclusion, the SIA918EDJ-T1-GE3 transistor array is an ideal option for those looking to amplify a low-noise signal without sacrificing signal integrity. It is ideally suited for low-power, high-frequency applications, such as audio and video electronic circuits, medical electronics, and communications systems. This type of transistor array is also cost-effective and has a relatively simple configuration.

The specific data is subject to PDF, and the above content is for reference

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