Allicdata Part #: | SIA915DJ-T4-GE3-ND |
Manufacturer Part#: |
SIA915DJ-T4-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V SC70-6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 3.7A (Ta), 4.5... |
DataSheet: | SIA915DJ-T4-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Part Status: | Last Time Buy |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta), 4.5A (Tc) |
Rds On (Max) @ Id, Vgs: | 87 mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 275pF @ 15V |
Power - Max: | 1.9W (Ta), 6.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIA915DJ-T4-GE3 transistor array is a reliable and high performance device specializing in fast switching and data processing. It is perfect for many digital applications in industrial, automotive and consumer markets due to its exceptional speed and low power consumption. It is especially suited for high-frequency switching in medium to high power electronic control systems, making it one of the best transistors for use in a wide range of applications.
The SIA915DJ-T4-GE3 is a field-effect transistor (FET) type of array, where the main element is a FET which is formed from a vertical array of metal-oxide semiconductor field-effect transistors (MOSFET). It is an enhancement-type device, meaning it can provide higher output current than a FET device with a lower input voltage. It also has fast switching capabilities and can be used in a range of controlled applications.
The SIA915DJ-T4-GE3 is a very versatile device, as it provides a wide range of output power, working voltage, and temperature range. It is also able to handle a variety of load currents (from 1mA up to 25A) and offers a low power consumption. The fast switching capabilities provided by the device make it ideal for high-frequency operations, such as digital signal processing.
When used as part of an analog circuit, the SIA915DJ-T4-GE3 can provide an excellent signal-to-noise ratio. It also features a high level of immunity to electrostatic discharge, so that it can be used in electronic devices and systems that require precision linear control. The device also features a wide dynamic range, so it can easily handle a variety of inputs and outputs in digital systems.
The working principle of the SIA915DJ-T4-GE3 is quite simple. It consists of an array of FETs which are arranged in parallel, allowing current to flow when they are triggered. That current creates a field effect in the transistors which causes them to either cause current to flow or prevent it from flowing. It also provides a relatively quick reaction time, so it can be used in applications where speed is a factor. The device is also able to provide an output current of up to 25A, which makes it useful in applications such as industrial motor controls, power electronics, and other types of high power applications.
In general, the SIA915DJ-T4-GE3 is an excellent choice for a wide range of applications. Its fast switching capabilities allow it to be used in applications where speed is necessary, and its low power consumption makes it perfect for digital signal processing applications. Its wide array of features make it a great choice for medium to high power electronic control systems, and its high immunity to ESD makes it a great choice for any system where precision linear control is required. It is a reliable and high performance device that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIA911DJ-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA914DJ-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4.5A SC7... |
SIA911EDJ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA912DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 12V 4.5A SC7... |
SIA913DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.5A SC7... |
SIA917DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA914DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.5A SC7... |
SIA936EDJ-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 4.5A SC-... |
SIA915DJ-T4-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V SC70-6Mo... |
SIA914ADJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.5A SC7... |
SIA911ADJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA920DJ-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET 2N-CH 8V 4.5A SC-7... |
SIA921EDJ-T4-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA915DJ-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET 2P-CH 30V 4.5A SC-... |
SIA950DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 190V 0.95A S... |
SIA911DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA918EDJ-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET 2N-CH 30V POWERPAK... |
SIA907EDJT-T1-GE3 | Vishay Silic... | 0.15 $ | 1000 | MOSFET 2P-CH 20V 4.5A SC-... |
SIA910EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 12V 4.5A SC-... |
SIA921EDJ-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA975DJ-T1-GE3 | Vishay Silic... | -- | 33000 | MOSFET 2P-CH 12V 4.5A SC-... |
SIA922EDJ-T1-GE3 | Vishay Silic... | -- | 27000 | MOSFET 2N-CH 30V 4.5A SC7... |
SIA928DJ-T1-GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET 2N-CH 30V POWERPAK... |
SIA931DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 4.5A SC7... |
SIA929DJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 4.5A SC7... |
SIA906EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 4.5A SC7... |
SIA923AEDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.5A SC7... |
SIA913ADJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 4.5A SC7... |
SIA923EDJ-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.5A SC-... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...