SIA923EDJ-T1-GE3 Discrete Semiconductor Products

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SIA923EDJ-T1-GE3 is one of the Transistors - FETs, MOSFETs - Arrays (TFT) family of MOSFETs. In this type of MOSFETs, the Source, Gate and Drain (SGD) are connected in a three-dimensional array. In this way, a single connection between SGD provides electrical connection between all three transistors. The SIA923EDJ-T1-GE3 MOSFETs feature a compact, 9 channel SGD array with a low RDSon of 6.5mΩ and a maximum VGSS of 12V. This combination of features makes it particularly suited for low-noise, high-speed switching applications.

The SIA923EDJ-T1-GE3 MOSFETs are designed for use in a wide range of industrial, consumer and consumer applications. The transistor array can be used in high voltage differential sensing and signal conditioning, as well as high speed switching in automotive and consumer power distribution systems. Additionally, the device can also be used for low voltage logic circuits, as well as for integrating signal generation and amplification in medical and industrial equipment.

The working principle of the SIA923EDJ-T1-GE3 MOSFETs is based on the principle of a field effect transistor (FET). A FET is basically a low power semiconductor device where the current flowing between the source and the drain is controlled by an applied external voltage, known as a gate voltage. This is illustrated in the figure below.

When a positive gate voltage is applied to the gate terminal of the MOSFET, the voltage attracts and traps the electrons in the channel region between the source and the drain, creating an area of high charge carriers (electrons & holes) called a depletion region. This region forms a barrier between the source and drain, controlling the current from the source to the drain. When a negative gate voltage is applied, the gate removes the charge carriers from the depletion region, and the current flow is allowed to pass through the source and drain.

The SIA923EDJ-T1-GE3 MOSFETs are designed for use in high-speed switching applications. The array of transistors provides the necessary current and switching control to enable the MOSFETs to control high power with low resistance. The low RDSon of the SIA923EDJ-T1-GE3 MOSFETs makes them ideal for applications where low levels of power dissipation are required, such as in low-noise, high-speed switching. The array of transistors in the SIA923EDJ-T1-GE3 also provides the advantage of allowing the device to be easily connected to the appropriate circuit without the need for complicated wiring.

In summary, the SIA923EDJ-T1-GE3 is one of the Transistors - FETs, MOSFETs - Arrays (TFT) family of MOSFETs. It features a compact, 9 channel SGD array with a low RDSon of 6.5mΩ and a maximum VGSS of 12V. This combination of features makes it particularly suited for low-noise, high-speed switching applications. Additionally, the array of transistors in the SIA923EDJ-T1-GE3 also provides the advantage of allowing the device to be easily connected to the appropriate circuit without the need for complicated wiring. The SIA923EDJ-T1-GE3 MOSFETs is based upon the FET working principle, in which the current flow between the source and the drain is controlled by an applied external voltage on the gate terminal.

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