Allicdata Part #: | SIA911DJ-T1-GE3-ND |
Manufacturer Part#: |
SIA911DJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 4.5A SC70-6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.5A 6.5W Surf... |
DataSheet: | SIA911DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SIA911 |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Package / Case: | PowerPAK® SC-70-6 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 6.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 355pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 12.8nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 94 mOhm @ 2.8A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Standard |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SIA911DJ-T1-GE3 is a new P-Channel MOSFET array from Rohm Semiconductor - a leading provider of advanced analog power management integrated circuits. It is designed to provide effective switching control for current-mode and voltage-mode switch-mode voltage regulators. The SIA911DJ-T1-GE3 is ideal for applications where high efficiency and high speed switching is desired, such as notebook and desktop computer power supplies, DC to DC converters, and other power supply applications.
The SIA911DJ-T1-GE3 is a surface mount device available as a 7-pin SSOP package. It can be used to regulate voltages ranging from 3V to 20V and can handle peak currents up to 10A. The device features 6 p-channel MOSFETs, along with a low on-state resistance (RDS(on)) of <3mohm, making it suitable for switching applications operating on both high and low currents. The device\'s built-in ESD protection provides up to 8KV, making it highly resistant to damage from electrostatic discharge.
This MOSFET array is ideal for high-speed applications due to its low switching times and low delay times. The device also features a wide operating temperature range of -40 to 125C, making it suitable for use in a variety of environments. The SIA911DJ-T1-GE3 also has a wide input common-mode range from -2V to 20V and a low quiescent current of 0.02mA, making it ideal for energy-saving applications.
The SIA911DJ-T1-GE3 MOSFET array works by providing a gate-to-source voltage (Vgs) to all six MOSFETs simultaneously, allowing it to be used in current-mode or voltage-mode switched-mode voltage regulators. The Vgs is applied by connecting the gate of the MOSFET to the output of an external voltage source, and the desired voltage level is set by the regulating IC\'s output. When the desired voltage level is reached, the SIA911DJ-T1-GE3 will open the MOSFETs and the regulator will turn off, allowing it to conserve power and reduce switching losses.
The SIA911DJ-T1-GE3 MOSFET array is an effective and reliable device for a wide range of power switching applications, such as notebook and desktop computers and DC-to-DC converters. It features a low on-state resistance and a wide operating temperature range, making it suitable for high-speed applications. Additionally, the built-in ESD protection makes it highly resistant to damage from electrostatic discharge, while the low quiescent current makes it an ideal choice for energy-saving applications.
The specific data is subject to PDF, and the above content is for reference
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