SIA922EDJ-T1-GE3 Discrete Semiconductor Products

The SIA922EDJ-T1-GE3 is a multichannel enhancement mode power field effect transistor (MOSFET) integrated circuit array. It is an ideal component to be used in a range of applications including power drive circuits, power amplifier circuits, DC-DC converters, and isolated switching circuits.

Description

The SIA922EDJ-T1-GE3 is a high-density integrated circuit, which is designed for power management applications. It has three FETs that are arranged in a single MOSFET structure. The enhanced drain-to-source breakdown voltage is 40V and the drain current is 1A. The rise and decay wave time is 75 nanoseconds and its input capacitance is about 360pF. It is available in an 8-pin DIP package.

Features

• High-density integrated circuit
• Enhanced drain-to-source breakdown voltage of 40V
• Drain current of 1A
• Rise and decay wave time of 75 nanoseconds
• Input capacitance of 360pF
• Available in an 8-pin DIP package

Applications

The SIA922EDJ-T1-GE3 is primarily designed for use in various power management applications, where it provides high-efficiency power management, low power consumption, and high reliability. It is especially suitable for use in DC-DC converters, power amplifier circuits, power drive circuits, and switching circuits.

Working Principle

The SIA922EDJ-T1-GE3 is an enhancement mode power field effect transistor (MOSFET) integrated circuit array. It consists of three FETs that are connected in parallel and configured to form a single MOSFET structure. When the gate-source voltage (VG) is larger than the threshold voltage (Vt), the electrons in the channel region begins to increase and the drain current begins to flow. In this process, the gate oxide layers act as an insulating layer and the channel region behaves like a resistor. As the gate-source voltage is increased, the drain current increases, resulting in the switching of the device.

When the gate-source voltage is applied, the flow of current through the device continues until the gate-source voltage is reduced below the threshold voltage. At this point, carriers in the channel depletion region increases and that reduces the drain current. When the gate-source voltage is taken to zero, the drain current becomes zero as well.

Conclusion

The SIA922EDJ-T1-GE3 is a multichannel enhancement mode power field effect transistor (MOSFET) integrated circuit array. It is an ideal component to be used in a range of applications including power drive circuits, power amplifier circuits, DC-DC converters, and isolated switching circuits. It is highly suitable for power management applications due to its high-efficiency power management and low power consumption. It can be easily used in the above-mentioned applications with its enhanced drain-to-source breakdown voltage of 40V, drain current of 1A, rise and decay wave time of 75 nanoseconds, and input capacitance of 360pF.