SIA936EDJ-T1-GE3

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SIA936EDJ-T1-GE3 is an array of complementary silicon n- and p-channel enhancement mode field effect transistors (FET). It is designed to be used as a load or power switch and offers excellent RDS (ON) drain-source on resistance and low gate charge.

The SIA936EDJ-T1-GE3 is made up of an array of nine N-C-N and nine P-C-P devices, each with its own gate, drain, and source terminals, as well as its own temperature sensor. The devices are housed in an 8-Pin (6x6mm) SURfPACK Package. The SIA936EDJ-T1-GE3 is designed for low frequency switch control in residential and commercial power control, robotics, and embedded applications.

The working principle of the device is based on how transistors expel current from the source terminal. When a transistor is turned on, the drain-source voltage (Vds) is set and current flows from the source to the drain until it is limited by the RDS(on). The gate controls the flow of current and is generally driven by a source voltage (Vgs) that is much higher than the Vds.

When the gate voltage is increased beyond the turn-on threshold of the device, the resistance between the drain and the source is decreased, allowing current to flow. This decrease in resistance is known as “transconductance”, and it is this “on-state” resistance that dictates how much current can be switched through the device.

The SIA936EDJ-T1-GE3 is capable of bidirectional switching, meaning that it can switch both positive and negative current. It has a 4-bit integrated temperature sensor array, with individual temperature measurement accuracy of ±0.5°C, so the device can automatically shut off if it is ever exposed to extreme temperatures.

The SIA936EDJ-T1-GE3 can provide up to 200mA of maximum drain current and is capable of bidirectional current switching up to 2A. It combines Drain-Source and Gate-Source on-resistance of less than 10 mΩ in a single package, allowing for higher efficiency and switching speeds.

In summary, the SIA936EDJ-T1-GE3 is an array of field effect transistors designed for use as a load or power switch. It offers excellent RDS(ON) drain-source on resistance and low gate charge, and is capable of both positive and negative current switching. It has an integrated temperature sensor array and can provide up to 2A of bidirectional current switching. The SIA936EDJ-T1-GE3 is suitable for use in residential and commercial power control, robotics, and embedded applications.

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