Allicdata Part #: | SIA928DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA928DJ-T1-GE3 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V POWERPAK SC70-6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4.5A (Tc) 7.8W... |
DataSheet: | SIA928DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.11679 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 15V |
Power - Max: | 7.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
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The SIA928DJ-T1-GE3 is a type of transistor array. The device is a monolithic quad high-voltage N-Channel MOSFET. It is designed especially for replacing a simple discrete solutions, making them easier to use and saving space.
In comparison to other transistors, the SIA928DJ-T1-GE3 is unique in that it does not require the assembly of several transistors. Instead, it is composed of four individual transistors in one package. This allows for a simpler construction and reduces the foot-print of the device, allowing for it to fit in tight spaces. The on-resistance of the individual transistors is tightly matched and the max VDSS and Id are all individually tweaked to be as close as possible.
The SIA928DJ-T1-GE3 has a wide range of applications due to its layout and built. It can be used in Modular Power Converters, Automotive Systems, and Robotics Control to name a few. In automotive system, it is mainly used in 12-24V systems. The robust construction and design makes it ideal for the rigorous environment found on vehicles, such as the vibration, humidity, and temperature changes.
In regard to working principle, the SIA928DJ-T1-GE3 consists of a main silicon substrate with four independent N-Channel MOSFETs sourced to it. These transistors are connected to four separate drains and can be activated one at a time with no need for any additional circuit components. When the gate voltage of a particular transistor reaches the threshold voltage then it will be turned on. After, the Source-Drain resistance of that transistor is decreased, allowing the flow current across the transistor.
As previously mentioned, the SIA928DJ-T1-GE3 offers a wide range of applications. With its built and performance, it can be utilized in different types of power supplies and systems. When used in motor control applications, it is capable of power processing up to 12A. Moreover, it can be used in lighting systems, solar inverters, and fan control as well. The device is also resistant to extreme temperatures, ranging from -40 degrees Celsius up to 150 degrees Celsius.
The SIA928DJ-T1-GE3 is an ideal choice for replacing a simple discrete solution with a single device, as it not only saves space and simplifies the construction but also offers a robust performance. With its wide range of applications and features, it can be useful for a variety of projects and needs.
The specific data is subject to PDF, and the above content is for reference
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