SIA910EDJ-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIA910EDJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA910EDJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 12V 4.5A SC-70-6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 12V 4.5A 7.8W Surf... |
DataSheet: | SIA910EDJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 5.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 6V |
Power - Max: | 7.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SC-70-6 Dual |
Supplier Device Package: | PowerPAK® SC-70-6 Dual |
Base Part Number: | SIA910E |
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SIA910EDJ-T1-GE3 is a commonly used semiconductor component, belonging to the category of transistors - FETs, MOSFETs - Arrays. Being a monolithic integrated weatherproof device, it is designed especially for applications of radio frequency provided in an economical, tiny plastic package.
SIA910EDJ-T1-GE3 is a high performance three way transistor that can be used for various applications. It was designed especially for high power Radio Frequency amplifier applications by providing excellent RF performance, short signal rise/fall times, and low noise.
With its very low on-resistance in both the high-side and the ground transistors, the SIA910EDJ-T1-GE3 can provide maximum efficiency and power gain for vertical or horizontal use. In addition, it has the capability to handle high currents up to a maximum of 80mA from the output drain, making it an ideal choice for many applications.
In terms of working principle, SIA910EDJ-T1-GE3 is composed of three MOSFETs in a high-side, low-side and ground topology. The signals at the input will be separated into two paths, the high side and low side paths. The high side path is when the inputted signal is applied to the gate of the high-side MOSFET and the output is obtained from the drain. The low side path is when the inputted signal is applied to the gate of the low-side MOSFET and the output is obtained from the source. Both output paths contain their respective currents.
In normal operation, these currents will be mirrored from the device, as the high-side and low-side MOSFETs are complementary in their nature. This results in the device providing a balanced output for both paths, allowing for an efficient design.
The SIA910EDJ-T1-GE3 is most suitable for applications such as configurable radio receivers and transmitters, wireless communication systems and wireless amplifier drivers. It is also often used for automotive electronics and for the amplification of industrial and commercial radio frequency signals such as GPS, Wi-Fi, Bluetooth and other RF technologies. As such, it has a wide range of possible applications and has proved to be an excellent choice for many circuit designs.
The specific data is subject to PDF, and the above content is for reference
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